CORC  > 物理研究所  > 物理所公开发表论文  > 期刊论文
Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites
Liu, HB ; Xie, SS ; Cheng, GS
刊名CRYSTENGCOMM
2011
卷号13期号:11页码:3649
关键词SELECTIVE-AREA GROWTH FUNDAMENTAL-BAND GAP NANOWIRE GROWTH INN EMISSION PHOTOLUMINESCENCE SURFACE
ISSN号1466-8033
通讯作者Cheng, GS (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China.
中文摘要Indium nitride crystallites were grown via combination of vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanisms using Au nanoparticles as catalysts. A surface diffusion model was proposed to interpret the formation mechanism of the InN crystallites. Facets of InN crystallites were tunable with variation of NH(3) flux.
收录类别SCI
资助信息National Natural Science Foundation of China [10834004]; Natural Science Foundation of Jiangsu Province of China [BK2008176]; Chinese Academy of Sciences
语种英语
公开日期2013-09-23
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/46500]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liu, HB,Xie, SS,Cheng, GS. Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites[J]. CRYSTENGCOMM,2011,13(11):3649.
APA Liu, HB,Xie, SS,&Cheng, GS.(2011).Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites.CRYSTENGCOMM,13(11),3649.
MLA Liu, HB,et al."Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites".CRYSTENGCOMM 13.11(2011):3649.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace