Tight-binding study of the magnetic properties of Mn-doped Ge

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Tight-binding study of the magnetic properties of Mn-doped Ge
	Liu, GQ ; Liu, BG
刊名	PHYSICAL REVIEW B
	2006
卷号	73 期号:4
关键词	FERROMAGNETISM SEMICONDUCTOR STABILITY (GA CLUSTERS MNXGE1-X MODEL MN)AS
ISSN号	1098-0121
通讯作者	Liu, GQ (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	A generalized tight-binding bond Stoner model satisfying charge self-consistence is used to study Mn-doped Ge. We fit the tight-binding parameters to first-principles nonmagnetic band structures of zinc blende MnGe, and then calculate the ferromagnetic and antiferromagnetic band structures with the local stoner model. The predicted band structures match the first-principles ferromagnetic and antiferromagnetic calculations of the MnGe well and reveal that the MnGe is a half-metallic ferromagnet with integer magnetic moment in Bohr magneton. Applied to low concentrations of Mn doping, this model produces good magnetic moments, spin-dependent density of states, and energetics for Mn doping concentrations down to 0.03125. These results are in agreement with corresponding first-principles calculations. This method can be applied to other transition-metal doped semiconductors.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45900]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Liu, GQ,Liu, BG. Tight-binding study of the magnetic properties of Mn-doped Ge[J]. PHYSICAL REVIEW B,2006,73(4).
APA	Liu, GQ,&Liu, BG.(2006).Tight-binding study of the magnetic properties of Mn-doped Ge.PHYSICAL REVIEW B,73(4).
MLA	Liu, GQ,et al."Tight-binding study of the magnetic properties of Mn-doped Ge".PHYSICAL REVIEW B 73.4(2006).