Thickness dependent valence fluctuation of CeN film

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	Thickness dependent valence fluctuation of CeN film
	Xiao, WD ; Guo, QL ; Wang, EG
刊名	SURFACE SCIENCE
	2004
卷号	572 期号:2-3 页码:296
关键词	ELECTRONIC-STRUCTURE THIN-FILMS PHOTOEMISSION SPECTRA MAGNETIC PROPERTIES CERIUM PNICTIDES MIXED-VALENCE PRESSURE STATES
ISSN号	0039-6028
通讯作者	Guo, QL (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China.
中文摘要	Nanostructured diamond films are deposited on mirror-polished silicon wafers under continuous ion bombardment by using a hot-filament chemical vapor deposition (HFCVD) chamber equipped with a substrate bias system. The morphology and phase purity of the diamond film, as related to the different deposition parameters, are evaluated by scanning electron microscopy (SEM) and Raman scattering spectroscopy. The results show that nanostructured diamond films with a large area, low stress and smooth surface can be synthesized on mirror-polished Si substrates by an economical HFCVD method, and the size of diamond clusters in the film can be controlled by a suitable selection of deposition parameters such as the bias current density and the ratio of CH4 to H-2. Furthermore, the relationship between the film's stress and the diamond clusters' size for the films synthesized under various parameters is revealed. The measurement of field emission from an as-grown nanostructured diamond film shows properties of a low emission threshold and a stable high-emission current density. (C) 2004 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45827]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Xiao, WD,Guo, QL,Wang, EG. Thickness dependent valence fluctuation of CeN film[J]. SURFACE SCIENCE,2004,572(2-3):296.
APA	Xiao, WD,Guo, QL,&Wang, EG.(2004).Thickness dependent valence fluctuation of CeN film.SURFACE SCIENCE,572(2-3),296.
MLA	Xiao, WD,et al."Thickness dependent valence fluctuation of CeN film".SURFACE SCIENCE 572.2-3(2004):296.