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Theory of spin-polarized tunneling between ferromagnetic films
Zhang, XD ; Li, BZ ; Pu, FC
刊名PHYSICS LETTERS A
1997
卷号236期号:4页码:356
关键词LARGE MAGNETORESISTANCE JUNCTIONS
ISSN号0375-9601
通讯作者Zhang, XD (reprint author), Chinese Acad Sci, Inst Phys, POB 603-99, Beijing 100080, Peoples R China.
中文摘要Second-harmonic generation (SHG) from electric-field biased (Si5Ge5)(100) superlattices and Si0.75Ge0.25/Si0.57Ge0.43/Si step asymmetry wells were studied. Contributions from the different sources to second-order susceptibility chi((2)) were systematically analyzed for these two kinds of asymmetry Si/Ge quantum-well structures. The bulklike chi((2)) was large enough to be observed while the strain-induced contribution to chi((2)) was relatively small for (Si5Ge5)(100) superlattices under an applied field of 100 kV/cm. However, strain-enhanced effects were large compared to the contribution from the bulk for the optical chi((2)) in SiGe/Si step wells. The results show that different asymmetric structures have different contributional distributions of SHG sources. The peak value of chi((2)) was as large as 5 x 10(-6) esu for a (Si5Ge5)(100) superlattice under 100 kV/cm electric field and 0.6 x 10(-6) esu far SiGe/Si step wells. These large bulklike chi((2)) values indicate that Si/Ge quantum wells with asymmetric structures have potential applications to optoelectronic materials and devices with the existing Si-based technology. [S0163-1829(97)01448-3].
收录类别SCI
语种英语
公开日期2013-09-23
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/45696]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhang, XD,Li, BZ,Pu, FC. Theory of spin-polarized tunneling between ferromagnetic films[J]. PHYSICS LETTERS A,1997,236(4):356.
APA Zhang, XD,Li, BZ,&Pu, FC.(1997).Theory of spin-polarized tunneling between ferromagnetic films.PHYSICS LETTERS A,236(4),356.
MLA Zhang, XD,et al."Theory of spin-polarized tunneling between ferromagnetic films".PHYSICS LETTERS A 236.4(1997):356.
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