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The superconductivity in boron-doped polycrystalline diamond thick films
Wang, ZL ; Luo, Q ; Liu, LW ; Li, CY ; Yang, HX ; Yang, HF ; Li, JJ ; Lu, XY ; Jin, ZS ; Lu, L ; Gu, CZ
刊名DIAMOND AND RELATED MATERIALS
2006
卷号15期号:4-8页码:659
关键词TEMPERATURE DEPENDENCE FIELD
ISSN号0925-9635
通讯作者Gu, CZ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China.
中文摘要Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 x 10(20) cm(-3), determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for T, onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high T-c value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron-phonon coupling. (c) 2006 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-23
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/45552]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, ZL,Luo, Q,Liu, LW,et al. The superconductivity in boron-doped polycrystalline diamond thick films[J]. DIAMOND AND RELATED MATERIALS,2006,15(4-8):659.
APA Wang, ZL.,Luo, Q.,Liu, LW.,Li, CY.,Yang, HX.,...&Gu, CZ.(2006).The superconductivity in boron-doped polycrystalline diamond thick films.DIAMOND AND RELATED MATERIALS,15(4-8),659.
MLA Wang, ZL,et al."The superconductivity in boron-doped polycrystalline diamond thick films".DIAMOND AND RELATED MATERIALS 15.4-8(2006):659.
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