Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)

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	Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)
	Zheng, XH ; Wang, YT ; Feng, ZH ; Yang, H ; Chen, H ; Zhou, JM ; Liang, JW
刊名	JOURNAL OF CRYSTAL GROWTH
	2003
卷号	250 期号:3-4 页码:345
关键词	GROWTH FILMS
ISSN号	0022-0248
通讯作者	Zheng, XH: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
中文摘要	In this research, c-axis oriented epitaxial anatase TiO2 thin films were grown on SrTiO3(100) substrates using a ceramic Ti0.95Co0.05O2 target by Pulsed Laser Deposition (PLD). The film growth processes were monitored by reflective high energy electronic diffraction (RHEED). Microstructure, conductivity, and magnetism of these doped films are found strongly affected by the oxygen pressure and substrate temperature T-s. Grown at a T-s around 750 degreesC in an oxygen pressure of 0.2 mbar, the dopants are found existing as oxide inclusions. The doped film thus behaves as an insulator and shows diamagnetism in a magnetic field parallel to the film surface. However, in the doped film grown at a reduced temperature of 630 degreesC in a vacuum, no impurity phase. can be identified. The film shows a saturated magnetic moment of 0.16mu(B)/Co and a fairly good conductivity at room temperature. It is then concluded that nonequilibrium growth at lower temperatures in vacuum is essential for a high solubility of Co in the TiO2 lattice and thus the ferromagnetism.
收录类别	SCI
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/41956]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zheng, XH,Wang, YT,Feng, ZH,et al. Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)[J]. JOURNAL OF CRYSTAL GROWTH,2003,250(3-4):345.
APA	Zheng, XH.,Wang, YT.,Feng, ZH.,Yang, H.,Chen, H.,...&Liang, JW.(2003).Method for measurement of lattice parameter of cubic GaN layers on GaAs (001).JOURNAL OF CRYSTAL GROWTH,250(3-4),345.
MLA	Zheng, XH,et al."Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)".JOURNAL OF CRYSTAL GROWTH 250.3-4(2003):345.