Low temperature growth of amorphous Si nanoparticles in oxide matrix for efficient visible, photoluminescence

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	Low temperature growth of amorphous Si nanoparticles in oxide matrix for efficient visible, photoluminescence
	Ma, LB ; Ji, AL ; Liu, C ; Wang, YQ ; Cao, ZX
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2004
卷号	22 期号:6 页码:2654
ISSN号	1071-1023
通讯作者	Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
中文摘要	We report a low temperature procedure for the fabrication of highly luminescent silicon nanoparticles in silicon-rich oxide films. A number density over 10(12)/cm(2) has been achieved for silicon particles of about 3 nm in size by plasma-enhanced chemical vapor deposition at a substrate temperature of 30 degreesC. Such deposits, when post-annealed at 500 degreesC for 2 min, manifested a photoluminescence two orders of magnitude more intense than those samples grown at 250 degreesC. Strong photoluminescence in the whole visible light range has been measured in samples prepared with this low-temperature procedure. The present results indicate the feasibility of fabricating silicon-based light-emitting devices with moderate processing temperatures. (C) 2004 American Vacuum Society.
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/41004]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Ma, LB,Ji, AL,Liu, C,et al. Low temperature growth of amorphous Si nanoparticles in oxide matrix for efficient visible, photoluminescence[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2004,22(6):2654.
APA	Ma, LB,Ji, AL,Liu, C,Wang, YQ,&Cao, ZX.(2004).Low temperature growth of amorphous Si nanoparticles in oxide matrix for efficient visible, photoluminescence.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,22(6),2654.
MLA	Ma, LB,et al."Low temperature growth of amorphous Si nanoparticles in oxide matrix for efficient visible, photoluminescence".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 22.6(2004):2654.