LOCAL HETEROEPITAXIAL DIAMOND FORMED DIRECTLY ON SILICON-WAFERS AND OBSERVED BY HIGH-RESOLUTION ELECTRON-MICROSCOPY

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	LOCAL HETEROEPITAXIAL DIAMOND FORMED DIRECTLY ON SILICON-WAFERS AND OBSERVED BY HIGH-RESOLUTION ELECTRON-MICROSCOPY
	YANG, J ; LIN, ZD ; WANG, LX ; JIN, S ; ZHANG, Z
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	1995
卷号	28 期号:6 页码:1153
关键词	CHEMICAL-VAPOR-DEPOSITION BIAS-ENHANCED NUCLEATION THIN-FILMS GROWTH SUBSTRATE SURFACES
ISSN号	0022-3727
通讯作者	YANG, J: CHINESE ACAD SCI,CCAST,INST PHYS,WORLD LAB,STATE KEY LAB SURFACE PHYS,BEIJING 100080,PEOPLES R CHINA.
中文摘要	The formation, structure and magnetic properties of are-cast Er2Fe16SiCx compounds with x=0, 0.5, 1,0, 1.5, 2.0 and 2.5 were studied. X-Ray diffraction indicates that these carbides are single phase with Th2Zn17-type or Th2Ni17-type structure, except for Er2Fe16SiC2.5, which contains a few per cent of alpha-Fe. Our result shows that the substitution of Si for Fe in the Er2Fe17Cx compounds helps the formation of high carbon rare earth-iron compounds with 2:17-type structure. A structural transition from Th2Ni17 type to Th2Zn17 type is observed as x increases. The Curie temperatures are found to increase monotonically with increasing x from 413 K for x=0 to 588 K for x=2.5. The saturation magnetization of these compounds is essentially constant at about 63 e.m.u. g(-1). Spin reorientation transitions are observed in the Er2Fe16SiCx compounds. The spin reorientation temperature is found to increase with carbon concentration for x less than or equal to 1.5 and remains at a constant value of about 160 K for x>1.5.
收录类别	SCI
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/40935]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	YANG, J,LIN, ZD,WANG, LX,et al. LOCAL HETEROEPITAXIAL DIAMOND FORMED DIRECTLY ON SILICON-WAFERS AND OBSERVED BY HIGH-RESOLUTION ELECTRON-MICROSCOPY[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,1995,28(6):1153.
APA	YANG, J,LIN, ZD,WANG, LX,JIN, S,&ZHANG, Z.(1995).LOCAL HETEROEPITAXIAL DIAMOND FORMED DIRECTLY ON SILICON-WAFERS AND OBSERVED BY HIGH-RESOLUTION ELECTRON-MICROSCOPY.JOURNAL OF PHYSICS D-APPLIED PHYSICS,28(6),1153.
MLA	YANG, J,et al."LOCAL HETEROEPITAXIAL DIAMOND FORMED DIRECTLY ON SILICON-WAFERS AND OBSERVED BY HIGH-RESOLUTION ELECTRON-MICROSCOPY".JOURNAL OF PHYSICS D-APPLIED PHYSICS 28.6(1995):1153.