Identification of structural defects in graphitic materials by gas-phase anisotropic etching | |
Wu, S ; Yang, R ; Shi, DX ; Zhang, GY | |
刊名 | NANOSCALE |
2012 | |
卷号 | 4期号:6页码:2005 |
关键词 | ORIENTED PYROLYTIC-GRAPHITE SCANNING-TUNNELING-MICROSCOPY ATOMIC-FORCE MICROSCOPY RAMAN-SPECTROSCOPY REVERSIBLE HYDROGENATION INDUCED OXIDATION PLASMA OXIDATION GRAPHENE LAYERS OXYGEN PLASMA BASAL-PLANE |
ISSN号 | 2040-3364 |
通讯作者 | Zhang, GY: Chinese Acad Sci, Inst Phys, Nanoscale Phys & Devices Lab, Beijing 100190, Peoples R China. |
中文摘要 | This article describes how the dimensions of nanowires affect the transmittance and sheet resistance of a random nanowire network. Silver nanowires with independently controlled lengths and diameters were synthesized with a gram-scale polyol synthesis by controlling the reaction temperature and time. Characterization of films composed of nanowires of different lengths but the same diameter enabled the quantification of the effect of length on the conductance and transmittance of silver nanowire films. Finite-difference time-domain calculations were used to determine the effect of nanowire diameter, overlap, and hole size on the transmittance of a nanowire network. For individual nanowires with diameters greater than 50 nm, increasing diameter increases the electrical conductance to optical extinction ratio, but the opposite is true for nanowires with diameters less than this size. Calculations and experimental data show that for a random network of nanowires, decreasing nanowire diameter increases the number density of nanowires at a given transmittance, leading to improved connectivity and conductivity at high transmittance (>90%). This information will facilitate the design of transparent, conducting nanowire films for flexible displays, organic light emitting diodes and thin-film solar cells. |
收录类别 | SCI |
资助信息 | Chinese Academy of Sciences (CAS); Chinese Ministry of Science and Technology [2012CB921302]; National Science Foundation of China (NSFC) [11174333, 11074288, 10974226] |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/39590] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Wu, S,Yang, R,Shi, DX,et al. Identification of structural defects in graphitic materials by gas-phase anisotropic etching[J]. NANOSCALE,2012,4(6):2005. |
APA | Wu, S,Yang, R,Shi, DX,&Zhang, GY.(2012).Identification of structural defects in graphitic materials by gas-phase anisotropic etching.NANOSCALE,4(6),2005. |
MLA | Wu, S,et al."Identification of structural defects in graphitic materials by gas-phase anisotropic etching".NANOSCALE 4.6(2012):2005. |
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