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Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O-3 films on Si with ultrathin SiO2 buffer layer
Lin, Y ; Zhao, BR ; Peng, HB ; Xu, B ; Chen, H ; Wu, F ; Tao, HJ ; Zhao, ZX ; Chen, JS
刊名APPLIED PHYSICS LETTERS
1998
卷号73期号:19页码:2781
关键词THIN-FILMS SUBSTRATE SI(001)
ISSN号0003-6951
通讯作者Zhao, BR: Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, POB 603, Beijing 100080, Peoples R China.
中文摘要A sensitive field- and frequency-dependent magnetoimpedance (MI) has been observed in nanocrystalline Fe73.5Cu1Nb3Si13.5B9 ribbons. A maximum value for the MI ration Delta Z/Z = [Z(H) -Z(H-max)]/Z( H-max), of more than 400% was obtained in these nanocrystalline ribbons (annealed for 3-5 h at 550 degrees C). A peak in the field dependence of the MI ratio Delta Z/Z was observed in nanocrystalline samples, but not in the as-quenched amorphous samples. The sensitivity attained a value larger than 60% Oe(-1) in the field range 3-7 Oe at 800 kHz for the nanocrystalline ribbons. Domain observation experiments show that the transverse domain structure observed in nanocrystalline samples is responsible for their giant MI effects, and the domain wall movements in the transverse domain pattern region are dominant during the initial magnetization processes in both longitudinal and transverse directions of the applied field. The correlation between the magnetization processes and the giant MI effects is discussed briefly based on the view of a modified skin effect. (C) 1998 American Institute of Physics. [S0021-8979(98)05322-5].
收录类别SCI
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/38907]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Lin, Y,Zhao, BR,Peng, HB,et al. Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O-3 films on Si with ultrathin SiO2 buffer layer[J]. APPLIED PHYSICS LETTERS,1998,73(19):2781.
APA Lin, Y.,Zhao, BR.,Peng, HB.,Xu, B.,Chen, H.,...&Chen, JS.(1998).Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O-3 films on Si with ultrathin SiO2 buffer layer.APPLIED PHYSICS LETTERS,73(19),2781.
MLA Lin, Y,et al."Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O-3 films on Si with ultrathin SiO2 buffer layer".APPLIED PHYSICS LETTERS 73.19(1998):2781.
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