Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement

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	Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement
	Xiao, WD ; Guo, QL ; Xue, QK ; Wang, EG
刊名	JOURNAL OF APPLIED PHYSICS
	2003
卷号	94 期号:8 页码:4847
关键词	WURTZITE GAN SURFACES ELECTRONIC-PROPERTIES SCHOTTKY CONTACTS BARRIER HEIGHTS INTERFACE FILMS OXYGEN STATES
ISSN号	0021-8979
通讯作者	Xue, QK: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1x1) surface are studied using x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy-electron diffraction. Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface, leading to formation of metallic Ga at room temperature. A downward Fermi level movement is observed, and the resultant Schottky barrier height is 1.5 eV. Annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction, reducing the Schottky barrier height. (C) 2003 American Institute of Physics.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38596]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Xiao, WD,Guo, QL,Xue, QK,et al. Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement[J]. JOURNAL OF APPLIED PHYSICS,2003,94(8):4847.
APA	Xiao, WD,Guo, QL,Xue, QK,&Wang, EG.(2003).Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement.JOURNAL OF APPLIED PHYSICS,94(8),4847.
MLA	Xiao, WD,et al."Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement".JOURNAL OF APPLIED PHYSICS 94.8(2003):4847.