Electronic transport through individual ZnO nanowires

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	Electronic transport through individual ZnO nanowires
	Li, QH ; Wan, Q ; Liang, YX ; Wang, TH
刊名	APPLIED PHYSICS LETTERS
	2004
卷号	84 期号:22 页码:4556
关键词	SEMICONDUCTING OXIDE NANOBELTS IN2O3 NANOWIRES SENSORS
ISSN号	0003-6951
通讯作者	Wang, TH: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Electronic transport through individual ZnO nanowires has been investigated. The current increases linearly with the bias and the conductance jumps upon ultraviolet illumination. The increase rate upon the illumination is much faster than the decrease rate as the light is off. The decrease rate under vacuum is slower than that in air. These phenomena are related to the surface oxygen species and further confirmed by in situ current-voltage measurements as a function of oxygen pressure at room temperature. Also, the conductance increases greatly as the temperature is raised. These results demonstrate that the surface oxygen species dominate the transport process through individual ZnO nanowires, which indicates their potential application to room temperature gas sensors. (C) 2004 American Institute of Physics.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37223]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, QH,Wan, Q,Liang, YX,et al. Electronic transport through individual ZnO nanowires[J]. APPLIED PHYSICS LETTERS,2004,84(22):4556.
APA	Li, QH,Wan, Q,Liang, YX,&Wang, TH.(2004).Electronic transport through individual ZnO nanowires.APPLIED PHYSICS LETTERS,84(22),4556.
MLA	Li, QH,et al."Electronic transport through individual ZnO nanowires".APPLIED PHYSICS LETTERS 84.22(2004):4556.