Effects of post-thermal treatment on quality of SiC grown by PVT method

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Effects of post-thermal treatment on quality of SiC grown by PVT method
	Zhu, LN ; Chen, XL ; Yang, H ; Peng, TH ; Ni, DQ ; Hu, BQ
刊名	CHINESE PHYSICS LETTERS
	2006
卷号	23 期号:8 页码:2273
关键词	CARBIDE SINGLE-CRYSTALS SILICON-CARBIDE SUBLIMATION GROWTH VAPOR TRANSPORT DEFECTS INGOTS
ISSN号	0256-307X
通讯作者	Chen, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	In/GaN/GaN multiple quantum wells (MQWs) are grown on planar and maskless periodically grooved sapphires by metal organic vapour phase epitaxy (MOCVD). High-resolution x-ray curves and transmission electron microscopy (TEM) are adopted to characterize the film quality. Compared with the MQWs grown on planar sapphire, the sample grown on grooved sapphire shows better crystaline quality: a remarkable reduction of dislocation densities is achieved. Meanwhile, the MQWs grown on grooved sapphire show two times larger PL intensity at room temperature. Temperature-dependant PL measurements are adopted to investigate the luminescence thermal quenching based on a fit to the Arrhenius plot of the normalized integrated PL intensity over the measured temperature range suggests that the nonradiative recombination centres (NRCs) are greatly reduced for the sample grown on grooved sapphire. We assume that the reduction of dislocations which act as NRCs is the main reason for the sample grown on pattern sapphire having higher PL intensity.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36788]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhu, LN,Chen, XL,Yang, H,et al. Effects of post-thermal treatment on quality of SiC grown by PVT method[J]. CHINESE PHYSICS LETTERS,2006,23(8):2273.
APA	Zhu, LN,Chen, XL,Yang, H,Peng, TH,Ni, DQ,&Hu, BQ.(2006).Effects of post-thermal treatment on quality of SiC grown by PVT method.CHINESE PHYSICS LETTERS,23(8),2273.
MLA	Zhu, LN,et al."Effects of post-thermal treatment on quality of SiC grown by PVT method".CHINESE PHYSICS LETTERS 23.8(2006):2273.