Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices

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	Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices
	Qin, L ; Shen, ZX ; Teo, KL ; Peng, CS ; Zhou, JM ; Tung, CH ; Tang, SH
刊名	THIN SOLID FILMS
	2003
卷号	424 期号:1 页码:23
关键词	SI GERMANIUM PHONONS ISLANDS SI(001) SEMICONDUCTORS SILICON ALLOYS
ISSN号	0040-6090
通讯作者	Shen, ZX: Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore.
中文摘要	Self-organized Ge/Si quantum dots (QD's) in strained Si/Ge short-period superlattices are studied by Raman scattering under hydrostatic pressure excited in-resonance and off-resonance with the confined Ge-like E, transition of Ge using 488 and 514.5 nm lines from an argon-ion laser and 632.8 nm line from a He-Ne laser. The Raman spectra of Ge-Ge, Si-Ge and Si-2TA modes of the QD's were obtained,as a function of pressure in the range of 1-70 kbar. Our results show that the mode Gruneisen parameter of the Ge-Ge phonon mode in QD's is found to be gamma = 0.81 +/- 0.01, which is smaller than that of the bulk Ge. We observe resonance effects with the confined Ge-like E, transition and the pressure coefficient of this resonating electronic transition obtained is similar to5 +/- I meV kbar(-1). (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36736]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Qin, L,Shen, ZX,Teo, KL,et al. Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices[J]. THIN SOLID FILMS,2003,424(1):23.
APA	Qin, L.,Shen, ZX.,Teo, KL.,Peng, CS.,Zhou, JM.,...&Tang, SH.(2003).Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices.THIN SOLID FILMS,424(1),23.
MLA	Qin, L,et al."Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices".THIN SOLID FILMS 424.1(2003):23.