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Catalyst-free growth of nanographene films on various substrates
Zhang, LC ; Shi, ZW ; Wang, Y ; Yang, R ; Shi, DX ; Zhang, GY
刊名NANO RESEARCH
2011
卷号4期号:3页码:315
关键词LARGE-AREA EPITAXIAL GRAPHENE SUSPENDED GRAPHENE CARBON-FILMS DIAMOND DEPOSITION MECHANISM SHEETS GAS
ISSN号1998-0124
通讯作者Zhang, GY: Chinese Acad Sci, Nanoscale Phys & Device Lab, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要We have developed a new method to grow uniform graphene films directly on various substrates, such as insulators, semiconductors, and even metals, without using any catalyst. The growth was carried out using a remote plasma enhancement chemical vapor deposition (r-PECVD) system at relatively low temperatures, enabling the deposition of graphene films up to 4-inch wafer scale. Scanning tunneling microscopy (STM) confirmed that the films are made up of nanocrystalline graphene particles of tens of nanometers in lateral size. The growth mechanism for the nanographene is analogous to that for diamond grown by PECVD methods, in spite of sp2 carbon atoms being formed in the case of graphene rather than sp3 carbon atoms as in diamond. This growth approach is simple, low-cost, and scalable, and might have potential applications in fields such as thin film resistors, gas sensors, electrode materials, and transparent conductive films.
收录类别SCI
资助信息Chinese Academy of Sciences (CAS); Science Foundation of CAS; National Science Foundation of China (NSFC) [10974226, 11074288]; National 973 project of China [2010CB934202]
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/34506]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhang, LC,Shi, ZW,Wang, Y,et al. Catalyst-free growth of nanographene films on various substrates[J]. NANO RESEARCH,2011,4(3):315.
APA Zhang, LC,Shi, ZW,Wang, Y,Yang, R,Shi, DX,&Zhang, GY.(2011).Catalyst-free growth of nanographene films on various substrates.NANO RESEARCH,4(3),315.
MLA Zhang, LC,et al."Catalyst-free growth of nanographene films on various substrates".NANO RESEARCH 4.3(2011):315.
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