Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation

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	Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation
	Tian, JF ; Wang, XJ ; Bao, LH ; Hui, C ; Liu, F ; Yang, TZ ; Shen, CM ; Gao, HJ
刊名	CRYSTAL GROWTH & DESIGN
	2008
卷号	8 期号:9 页码:3160
关键词	NANOWIRE BUILDING-BLOCKS CDSE QUANTUM DOTS CARBON NANOTUBES GROWTH PHOTOLUMINESCENCE FABRICATION NANORODS HETEROSTRUCTURES NANOSTRUCTURES ARRAYS
ISSN号	1528-7483
通讯作者	Gao, HJ: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China.
中文摘要	Boron carbide and silicon oxide (BCSiO) hetero-nanonecklaces have been successfully synthesized via temperature modulation. This kind of nanostructure was formed by coating 100-500 nm silicon oxide nanoballs onto 20-30 nm boron carbide nanowires. Synthetic analysis shows that a two-step model at different temperatures and the poor wettability between boron carbide and silicon oxide play important roles in the growth of hetero-nanonecklaces. Photoluminescence of the synthesized BCSiO hetero-nanonecklaces shows enhanced visible light emissions at 637.6 nm, which is attributed to the small size of the boron carbide nanowires and defects induced by silicon oxide sheaths.
收录类别	SCI
资助信息	National Science Foundation of China [90101025, 60571045]; National "863" [2007AA03Z305]; "973" project of China [2007CB935503]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34295]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Tian, JF,Wang, XJ,Bao, LH,et al. Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation[J]. CRYSTAL GROWTH & DESIGN,2008,8(9):3160.
APA	Tian, JF.,Wang, XJ.,Bao, LH.,Hui, C.,Liu, F.,...&Gao, HJ.(2008).Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation.CRYSTAL GROWTH & DESIGN,8(9),3160.
MLA	Tian, JF,et al."Boron carbide and silicon oxide hetero-nanonecklaces via temperature modulation".CRYSTAL GROWTH & DESIGN 8.9(2008):3160.