Asymmetry in the hysteresis loop of Pb(Zr0.53Ti0.47)O-3/SiO2/Si structures

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	Asymmetry in the hysteresis loop of Pb(Zr0.53Ti0.47)O-3/SiO2/Si structures
	Lin, Y ; Zhao, BR ; Peng, HB ; Hao, Z ; Xu, B ; Zhao, ZX ; Chen, JS
刊名	JOURNAL OF APPLIED PHYSICS
	1999
卷号	86 期号:8 页码:4467
关键词	FIELD-EFFECT TRANSISTOR SIO2 BUFFER LAYER
ISSN号	0021-8979
通讯作者	Zhao, BR: Chinese Acad Sci, Inst Phys, Natl Lab Semiconductor, POB 603, Beijing 100080, Peoples R China.
中文摘要	By considering the excitation of the spin wave at the interface between magnetic electrodes and insulating barrier and taking the mean-field approximation to the s-d exchange interaction, a T-3/2 law is derived for the temperature (T) dependence of the exchange field in ferromagnets. Then we have investigated the T dependence of spin-polarized tunneling in a magnetic tunnel junction with an asymmetrical barrier. It is found that the extended Slonczewski model can provide a good approximation for the T-dependence of the junction magnetoresistance (JMR), a qualitative explanation for parallel tunneling conductance, and an exact description for the conductance difference between the parallel and antiparallel alignments of two electrodes (Delta G). However, for the Julliere model, owing to the smaller contribution from interfacial states it involves, a decreasing T-dependence of the parallel conductance is derived, which is in contradiction with experimental results. (C) 1999 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34006]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Lin, Y,Zhao, BR,Peng, HB,et al. Asymmetry in the hysteresis loop of Pb(Zr0.53Ti0.47)O-3/SiO2/Si structures[J]. JOURNAL OF APPLIED PHYSICS,1999,86(8):4467.
APA	Lin, Y.,Zhao, BR.,Peng, HB.,Hao, Z.,Xu, B.,...&Chen, JS.(1999).Asymmetry in the hysteresis loop of Pb(Zr0.53Ti0.47)O-3/SiO2/Si structures.JOURNAL OF APPLIED PHYSICS,86(8),4467.
MLA	Lin, Y,et al."Asymmetry in the hysteresis loop of Pb(Zr0.53Ti0.47)O-3/SiO2/Si structures".JOURNAL OF APPLIED PHYSICS 86.8(1999):4467.