Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells

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	Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells
	Wang, Y ; Pei, XJ ; Xing, ZG ; Guo, LW ; Jia, HQ ; Chen, H ; Zhou, JM
刊名	APPLIED PHYSICS LETTERS
	2007
卷号	91 期号:6
ISSN号	0003-6951
中文摘要	Tunneling-assisted carrier transfer in coupled double InGaN/GaN quantum wells (QWs) has been studied by temperature-dependent photoluminescence (PL) at varied excitation density. It is found that the carriers captured by the wide ("deep") well are efficiently transferred to the adjacent narrow ("shallow") one by resonant tunneling, which results in anomalous temperature dependence of PL intensity and significantly enhanced luminescent efficiency for the narrow well. This is disparate from those conventional tunneling-assisted behaviors in coupled double QWs constructed by zinc-blende materials without polarization effect, where the carriers are always tunneling from the narrow ("shallow") well to the wide ("deep") one.
收录类别	SCI
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/33881]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, Y,Pei, XJ,Xing, ZG,et al. Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells[J]. APPLIED PHYSICS LETTERS,2007,91(6).
APA	Wang, Y.,Pei, XJ.,Xing, ZG.,Guo, LW.,Jia, HQ.,...&Zhou, JM.(2007).Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells.APPLIED PHYSICS LETTERS,91(6).
MLA	Wang, Y,et al."Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells".APPLIED PHYSICS LETTERS 91.6(2007).