Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations
	Liu, EZ ; Wang, CY ; Wang, JT
刊名	PHYSICAL REVIEW B
	2006
卷号	74 期号:7
关键词	MEDIATED EPITAXIAL-GROWTH SURFACTANTS
ISSN号	1098-0121
通讯作者	Liu, EZ: Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China.
中文摘要	The adsorption and diffusion of Ge adatoms and ad-dimers on the one-monolayer Sb-covered Si(001) surface are studied using first-principles total-energy calculations. It is shown that Ge adatoms and ad-dimers can both break Sb dimers because of the weak bonding of the Sb dimers on Si(001). As a result, the most stable sites are both on the Sb dimer rows for Ge adatoms and ad-dimers, which is in significant contrast to the conventional picture that the most stable site for a Ge ad-dimer is in the trough between the group-V element dimer rows. We have also examined the energetics of the site exchange between Ge and Sb atoms for the surfactant-mediated growth and find that Ge ad-dimers tend to exchange with the subsurface Sb atoms one by one perpendicular to the surface dimer rows.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/33503]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Liu, EZ,Wang, CY,Wang, JT. Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations[J]. PHYSICAL REVIEW B,2006,74(7).
APA	Liu, EZ,Wang, CY,&Wang, JT.(2006).Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations.PHYSICAL REVIEW B,74(7).
MLA	Liu, EZ,et al."Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations".PHYSICAL REVIEW B 74.7(2006).