Structural modifications of AlInN/GaN thin films by neon ion implantation

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米加工公共平台

	Structural modifications of AlInN/GaN thin films by neon ion implantation
	Majid, A ; Husnain, G ; Usman, M ; Shakoor, A ; Hassan, N ; Zhu, JJ(朱建军)
刊名	PHYSICS LETTERS A
	2013-10
卷号	377 期号:41 页码:2986-2989
关键词	Implantation Defects III-nitrides
通讯作者	Majid, A
英文摘要	To study ion beam induced modifications into MOCVD grown wurtzite AlInN layers, neon ions were implanted on the samples with four doses ranging from 10(14) to 9 x 10(15) ions/cm(2). Structural characterization was carried out by X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques. XRD analysis revealed that GaN related peak for all samples remains at its usual Bragg position of 2 theta = 34.56 degrees whereas a shift in AlInN peak takes place from its position of 2 theta = 35.51 degrees for as-grown sample. Rutherford back scattering (RBS) analysis indicated that peak related to Ga atoms in capping layer provided evidence of partial sputtering of GaN cap layers. Moreover, Al peak position is shifted towards lower channel side and width of the signal is increased after implantation, which pointed to the inwards migration of Al atoms away from the AlInN surface. The results suggested that partial sputtering of cap layer has taken place without uncovering the underneath AlInN layer.
收录类别	SCI
语种	英语
WOS记录号	WOS:000326365100013
公开日期	2014-01-15
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1408]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Majid, A,Husnain, G,Usman, M,et al. Structural modifications of AlInN/GaN thin films by neon ion implantation[J]. PHYSICS LETTERS A,2013,377(41):2986-2989.
APA	Majid, A,Husnain, G,Usman, M,Shakoor, A,Hassan, N,&Zhu, JJ.(2013).Structural modifications of AlInN/GaN thin films by neon ion implantation.PHYSICS LETTERS A,377(41),2986-2989.
MLA	Majid, A,et al."Structural modifications of AlInN/GaN thin films by neon ion implantation".PHYSICS LETTERS A 377.41(2013):2986-2989.