GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER

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	GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER
	C. J. Dong ; M. Xu ; W. Lu ; Q. Z. Huang
刊名	Surface Review and Letters
	2013
卷号	20 期号:2
关键词	Thin films nitrides sputtering microstructure chemical-vapor-deposition molecular-beam epitaxy optical-properties lattice-constants phase epitaxy wurtzite inn thin-films layers spectroscopy nitridation
ISSN号	0218-625X
原文出处	://WOS:000320466300005
语种	英语
公开日期	2013-12-24
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/71188]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	C. J. Dong,M. Xu,W. Lu,et al. GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER[J]. Surface Review and Letters,2013,20(2).
APA	C. J. Dong,M. Xu,W. Lu,&Q. Z. Huang.(2013).GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER.Surface Review and Letters,20(2).
MLA	C. J. Dong,et al."GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER".Surface Review and Letters 20.2(2013).