Synaptic Behaviors Mimicked in Flexible Oxide-Based Transistors on Plastic Substrates

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	Synaptic Behaviors Mimicked in Flexible Oxide-Based Transistors on Plastic Substrates
	Wan Q(万青) ; Jumei Zhou, Changjin Wan, Liqiang Zhu, Yi Shi, and Qing Wan
刊名	IEEE Electron Device Letters
	2013-09-16
期号	11 页码:1433—1435
通讯作者	万青
合作状况	李雨桐
中文摘要	In the human brain, synapses are the crucial connective parts between neurons, which endow neurons with significant computational abilities. Here, indium-zinc-oxide (IZO) based flexible synaptic transistors are fabricated on a plastic substrate by a simple self-assembly method. Proton conducting phosphorus-doped nanogranular SiO2 electrolyte is used as the gate dielectric. Excitatory postsynaptic current, paired-pulse facilitation, and long-term memory are mimicked in the flexible artificial synapses. Such IZO-based flexible electronic synapses are promising for building neuromorphic systems.
学科主题	物理化学
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/10035]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Wan Q,Jumei Zhou, Changjin Wan, Liqiang Zhu, Yi Shi, and Qing Wan. Synaptic Behaviors Mimicked in Flexible Oxide-Based Transistors on Plastic Substrates[J]. IEEE Electron Device Letters,2013(11):1433—1435.
APA	Wan Q,&Jumei Zhou, Changjin Wan, Liqiang Zhu, Yi Shi, and Qing Wan.(2013).Synaptic Behaviors Mimicked in Flexible Oxide-Based Transistors on Plastic Substrates.IEEE Electron Device Letters(11),1433—1435.
MLA	Wan Q,et al."Synaptic Behaviors Mimicked in Flexible Oxide-Based Transistors on Plastic Substrates".IEEE Electron Device Letters .11(2013):1433—1435.