Grown-in precipitates in heavily phosphorus-doped Czochralski silicon

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 宁波所知识产出

	Grown-in precipitates in heavily phosphorus-doped Czochralski silicon
	Deren Yang ; Yuheng Zeng, Xiangyang Ma, Jiahe Chen, Weijie Song, Weiyan Wang et al.
刊名	JOURNAL OF APPLIED PHYSICS
	2012-02-09
卷号	100 页码:033520-1—033520-4
通讯作者	Deren Yang
合作状况	李雨桐
中文摘要	Through comparing the oxygen precipitation in the heavily and lightly phosphorus (P)-doped Czochralski silicon (CZ Si) specimens subjected to the simulated cooling processes of silicon ingot, we researched the influences of heavily P doping on grown-in precipitates by preferential etching and transmission electron microscopy (TEM). It was found that grown-in recipitates were more significant in heavily P-doped CZ Si than in lightly one. Most grown-in precipitates in heavily P-doped CZ Si were generated at (800–600) C. The significant grown-in oxygen precipitates in the heavily P-doped CZ Si would change the density and morphology of oxygen precipitation. TEM examination revealed that the grown-in precipitates in heavily P-doped CZ Si were amorphous oxygen precipitates composed of tiny precipitates in essential. Although more or less phosphorus may be incorporated in the grown-in precipitates, however, phosphorus cannot be detected so far. We further confirmed that extending annealing at 550 C produced significant silicon phosphide (SiP) precipitation in heavily P-doped CZ Si. Summarily, enhancement of grown-in oxygen precipitates was attributed to SiP precipitation and high-concentration vacancy, tentatively. Nonetheless, further investigation on the essential of grown-in precipitates in heavily P-doped CZ Si is worthy.
学科主题	物理化学
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9553]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Deren Yang,Yuheng Zeng, Xiangyang Ma, Jiahe Chen, Weijie Song, Weiyan Wang et al.. Grown-in precipitates in heavily phosphorus-doped Czochralski silicon[J]. JOURNAL OF APPLIED PHYSICS,2012,100:033520-1—033520-4.
APA	Deren Yang,&Yuheng Zeng, Xiangyang Ma, Jiahe Chen, Weijie Song, Weiyan Wang et al..(2012).Grown-in precipitates in heavily phosphorus-doped Czochralski silicon.JOURNAL OF APPLIED PHYSICS,100,033520-1—033520-4.
MLA	Deren Yang,et al."Grown-in precipitates in heavily phosphorus-doped Czochralski silicon".JOURNAL OF APPLIED PHYSICS 100(2012):033520-1—033520-4.