structural and electrical characteristics of rf sputtered yon gate dielectrics and their thin-film transistor applications
Liu Zhimin ; Liang Lingyan ; Yu Zheng ; He Shikun ; Ye Xiaojuan ; Sun Xilian ; Sun Aihua ; Cao Hongtao
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
2011
卷号44期号:15页码:-
关键词Dielectric materials
ISSN号0022-3727
学科主题Physics, Applied
收录类别其他
语种英语
公开日期2011-05-10
内容类型期刊论文
源URL[http://ir.nimte.ac.cn/handle/174433/1396]  
专题宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式
GB/T 7714
Liu Zhimin,Liang Lingyan,Yu Zheng,et al. structural and electrical characteristics of rf sputtered yon gate dielectrics and their thin-film transistor applications[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(15):-.
APA Liu Zhimin.,Liang Lingyan.,Yu Zheng.,He Shikun.,Ye Xiaojuan.,...&Cao Hongtao.(2011).structural and electrical characteristics of rf sputtered yon gate dielectrics and their thin-film transistor applications.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(15),-.
MLA Liu Zhimin,et al."structural and electrical characteristics of rf sputtered yon gate dielectrics and their thin-film transistor applications".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.15(2011):-.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace