Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO3 buffer layer

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	Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO3 buffer layer
	Wang, YZ ; Cao, L ; Qi, DC ; Chen, W ; Wee, ATS ; Gao, XY(高兴宇)
刊名	JOURNAL OF APPLIED PHYSICS
	2012
卷号	112 期号:3
ISSN号	0021-8979
英文摘要	We demonstrate that the interfacial hole injection barrier Delta(h) between p-type organic materials (i.e., CuPc and pentacene) and Co substrate can be tuned by the insertion of a MoO3 buffer layer. Using ultraviolet photoemission spectroscopy, it was found that the introduction of MoO3 buffer layer effectively reduces the hole injection barrier from 0.8 eV to 0.4 eV for the CuPc/Co interface, and from 1.0 eV to 0.4 eV for the pentacene/Co interface, respectively. In addition, by varying the thickness of the buffer, the tuning effect of Delta(h) is shown to be independent of the thickness of MoO3 interlayer at both CuPc/Co and pentacene/Co interfaces. This Fermi level pinning effect can be explained by the integer charge-transfer model. Therefore, the MoO3 buffer layer has the potential to be applied in p-type organic spin valve devices to improve the device performance via reducing the interfacial hole injection barrier. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4740455]
语种	英语
WOS记录号	WOS:000308335400047
公开日期	2013-12-05
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/13330]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式 GB/T 7714	Wang, YZ,Cao, L,Qi, DC,et al. Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO3 buffer layer[J]. JOURNAL OF APPLIED PHYSICS,2012,112(3).
APA	Wang, YZ,Cao, L,Qi, DC,Chen, W,Wee, ATS,&Gao, XY.(2012).Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO3 buffer layer.JOURNAL OF APPLIED PHYSICS,112(3).
MLA	Wang, YZ,et al."Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO3 buffer layer".JOURNAL OF APPLIED PHYSICS 112.3(2012).