Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method

doi:10.3390/cryst14020118

	Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method
	Zhang, Yu 3; Wen, Xin 3; Chen, Nuofu 3; Zhang, Fang 3; Chen, Jikun 2; Hu, Wenrui 1
刊名	CRYSTALS
	2024-02-01
卷号	14 期号:2 页码:11
关键词	numerical simulation SiC single crystal growth heat transfer fluid flow
DOI	10.3390/cryst14020118
通讯作者	Chen, Nuofu(nfchen@ncepu.edu.cn)
英文摘要	Silicon carbide (SiC) polycrystalline powder. As the raw material for SiC single-crystal growth through the physical vapor transport (PVT) method, its surface size and shape have a great influence on growth of crystal. The surface size and shape of the evaporation area filled with polycrystalline powder were investigated by numerical simulation in this study. Firstly, the temperature distribution and deposition rate distribution for the PVT system were calculated by global numerical simulation, and the optimal ratio of polycrystalline powder surface diameter to seed crystal diameter was determined to be 1.6. Secondly, the surface of the evaporation area filled with polycrystalline powder was covered by a graphite ring and a graphite disc, respectively, to change its surface shape. The results show that adjusting the surface size and shape of the evaporation area filled with polycrystalline powder is an effective method to control the growth rate, growth stability, and growth surface shape of the single crystal. Finally, the result obtained by selecting appropriate covered structures for actual growth indicates that this process can act as a reference for improving the quality of single crystals.
资助项目	Ministry of Science and Technology of the People's Republic of China
WOS关键词	SILICON-CARBIDE ; SUBLIMATION GROWTH ; HEAT-TRANSFER ; KINETICS ; DESIGN ; MODEL
WOS研究方向	Crystallography ; Materials Science
语种	英语
WOS记录号	WOS:001170062100001
资助机构	Ministry of Science and Technology of the People's Republic of China
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/94531]
专题	力学研究所_国家微重力实验室
通讯作者	Chen, Nuofu
作者单位	1.Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China 2.Beijing Univ Sci & Technol, Sch Mat Sci & Engn, Beijing 100083, Peoples R China 3.North China Elect Power Univ, Sch New Energy, Beijing 102206, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Yu,Wen, Xin,Chen, Nuofu,et al. Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method[J]. CRYSTALS,2024,14(2):11.
APA	Zhang, Yu,Wen, Xin,Chen, Nuofu,Zhang, Fang,Chen, Jikun,&Hu, Wenrui.(2024).Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method.CRYSTALS,14(2),11.
MLA	Zhang, Yu,et al."Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method".CRYSTALS 14.2(2024):11.