Thickness dependence of metal-insulator transition in SrMoO3 thin films

doi:10.1063/5.0098993

	Thickness dependence of metal-insulator transition in SrMoO3 thin films
	Zhu, Min 3,4; Li, Pengfei 4; Hu, Ling 4; Wei, Renhuai 4; Yang, Jie 4; Song, Wenhai 4; Zhu, Xuebin 3,4; Sun, Yuping 1,2,4
刊名	JOURNAL OF APPLIED PHYSICS
	2022-08-21
卷号	132
ISSN号	0021-8979
DOI	10.1063/5.0098993
通讯作者	Hu, Ling(huling@issp.ac.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn)
英文摘要	We have investigated the thickness-dependent transport properties of SrMoO3 thin films deposited on LaAlO3 substrates. Metal-insulator transitions (MITs) were observed in SrMoO3 thin films with thickness below 10 nm. The low-temperature resistivity of these films can be explained by quantum corrections of the conductivity. An insulating behavior is observed when the thickness becomes 3.5 nm, and the resistivity can be described by the variable range hopping model with 2D fitting. The magneto-transport measurement of an SrMoO3 thin film with small positive magnetoresistance confirms that the driving force behind MIT is the renormalized electron-electron interaction. Published under an exclusive license by AIP Publishing.
资助项目	Anhui Provincial Key RD Program[2022a05020037] ; Collaborative Innovation Program of Hefei Science Center, CAS[2019HSCCIP008] ; National Natural Science Foundation of China ; Chinese Academy of Sciences Large-Scale Scientific Facility[U1532149]
WOS关键词	HOPPING CONDUCTIVITY ; BANDWIDTH CONTROL ; RESISTIVITY ; CA1-XSRXVO3 ; DIFFUSION ; GROWTH
WOS研究方向	Physics
语种	英语
出版者	AIP Publishing
WOS记录号	WOS:000843032400001
资助机构	Anhui Provincial Key RD Program ; Collaborative Innovation Program of Hefei Science Center, CAS ; National Natural Science Foundation of China ; Chinese Academy of Sciences Large-Scale Scientific Facility
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/132033]
专题	中国科学院合肥物质科学研究院
通讯作者	Hu, Ling; Zhu, Xuebin
作者单位	1.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, High Magnet Field Lab, HFIPS, Hefei 230031, Peoples R China 3.Univ Sci & Technol China, Sci Isl Grad Sch, Hefei 230026, Peoples R China 4.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Zhu, Min,Li, Pengfei,Hu, Ling,et al. Thickness dependence of metal-insulator transition in SrMoO3 thin films[J]. JOURNAL OF APPLIED PHYSICS,2022,132.
APA	Zhu, Min.,Li, Pengfei.,Hu, Ling.,Wei, Renhuai.,Yang, Jie.,...&Sun, Yuping.(2022).Thickness dependence of metal-insulator transition in SrMoO3 thin films.JOURNAL OF APPLIED PHYSICS,132.
MLA	Zhu, Min,et al."Thickness dependence of metal-insulator transition in SrMoO3 thin films".JOURNAL OF APPLIED PHYSICS 132(2022).