Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD

doi:10.1109/JSEN.2022.3170570

	Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD
	Zhang, Lilong 1; Wang, Ying 1; Guo, Haomin 1; Yu, Chenghao 1; Hu, Haifan 2; Liu, Yuntao 3; Chen, Size 4
刊名	IEEE SENSORS JOURNAL
	2022-06-01
卷号	22
关键词	Neutron detector silicon carbide transient current charge collection SRIM and TCAD
ISSN号	1530-437X
DOI	10.1109/JSEN.2022.3170570
通讯作者	Wang, Ying(wangying7711@yahoo.com)
英文摘要	Since neutrons are electrically neutral, the methods used to detect neutrons generally rely on secondary charged particles, which are produced by the interaction of neutrons and neutron conversion materials (such as (LiF)-Li-6, B-10). In this report, the SRIM code has been used to analyze the ionization properties of a particles and H-3 particles traveling through the Silicon Carbide (SiC) diode, and subsequently, the final Bragg ionization distribution has been obtained. Next, according to the obtained ionization distribution of secondary particles, the linear energy transfer (LET) distribution of the secondary particles is extraced accurately. Finally, based on the distribution of LET, Technology Computer Aided Design (TCAD) simulations are utilized to analyze the transient current pulses of thin-film-coated and trench-type SiC diodes. In addition, the effects of particle energy and applied reverse bias on the output pulse characteristics of SiC diodes are also explored. Essentially, this paper augments the understanding of output response from SiC neutron detectors, and for trench-type detectors, the order of output current pulse amplitude decreases significantly and has a long-tail. Therefore, the trench-type detectors not only need a more advanced fabrication process but also require the design of dedicated readout electronics.
资助项目	National Research and Development Program for Major Research Instruments of China[62027814]
WOS关键词	ION-IMPLANTATION ; DETECTION SYSTEM ; SEMICONDUCTOR ; DESIGN ; PERFORMANCE ; SIMULATION ; FILM ; DIODE
WOS研究方向	Engineering ; Instruments & Instrumentation ; Physics
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000804789800063
资助机构	National Research and Development Program for Major Research Instruments of China
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/131197]
专题	中国科学院合肥物质科学研究院
通讯作者	Wang, Ying
作者单位	1.Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou 310018, Peoples R China 2.Aerosp Sci & Technol Corp, X Lab, Inst China 2, Beijing 100854, Peoples R China 3.Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Peoples R China 4.Chinese Acad Sci, Inst Nucl Energy Safety Technol, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Lilong,Wang, Ying,Guo, Haomin,et al. Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD[J]. IEEE SENSORS JOURNAL,2022,22.
APA	Zhang, Lilong.,Wang, Ying.,Guo, Haomin.,Yu, Chenghao.,Hu, Haifan.,...&Chen, Size.(2022).Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD.IEEE SENSORS JOURNAL,22.
MLA	Zhang, Lilong,et al."Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD".IEEE SENSORS JOURNAL 22(2022).