Er3+-doped LuYSGG crystal as a potential 2.79 mu m radiation-resistant laser material
Zhang, Huili1,4,5; Bian, Jintian3,5; Sun, Dunlu1,4,5; Luo, Jianqiao1,4,5; Quan, Cong1,4,5; Hu, Lunzhen1,2; Han, Zhiyuan1,2; Dong, Kunpeng1,2; Cheng, Maojie1,2; Chen, Yuwei1,2
刊名OPTICS AND LASER TECHNOLOGY
2022-08-01
卷号152
关键词Er:LuYSGG Radiation-resistant Mid-infrared Spectroscopy Laser performance
ISSN号0030-3992
DOI10.1016/j.optlastec.2022.108121
通讯作者Sun, Dunlu(dlsun@aiofm.ac.cn)
英文摘要We demonstrate the influence of gamma-ray irradiation on the structure, spectroscopies, and laser performance of Er:LuYSGG crystal. After 100 Mrad Co-60 gamma-ray irradiation, the crystal structure remains unchanged, the absorption near 968 nm and emission within 2.7 similar to 3 mu m are almost unaffected, the level lifetimes are reduced, and the maximum output power of 886 mW is achieved with a maximum slope efficiency of 20.8%. The maximum output power and slope efficiency decrease by only 2.5% and 3.7% after irradiation, respectively, and the M-2 factor is little affected by irradiation. The results indicate that the Er:LuYSGG crystal is a potential mid-infrared radiation-resistant laser material applied in radiation environments.
资助项目Youth Fund of Advanced Laser Technology Laboratory of Anhui Province[AHL2020QN02] ; National Natural Science Foundation of China (NSFC)[52102012and 51872290] ; Natural Science Foundation of Anhui Province[1908085QE176]
WOS关键词INDUCED COLOR-CENTERS ; OPTICAL-PROPERTIES ; GAMMA-IRRADIATION ; CONTINUOUS-WAVE ; MID-IR ; GROWTH ; YB ; ER
WOS研究方向Optics ; Physics
语种英语
出版者ELSEVIER SCI LTD
WOS记录号WOS:000792637600005
资助机构Youth Fund of Advanced Laser Technology Laboratory of Anhui Province ; National Natural Science Foundation of China (NSFC) ; Natural Science Foundation of Anhui Province
内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/130771]  
专题中国科学院合肥物质科学研究院
通讯作者Sun, Dunlu
作者单位1.Chinese Acad Sci, Crystal Lab Laser Technol Res Ctr, Anhui Inst Opt & Fine Mech, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
2.Univ Sci & Technol China, Hefei 230022, Peoples R China
3.Natl Univ Def Technol, State Key Lab Pulsed Power Laser Technol, Hefei 230037, Peoples R China
4.Key Lab Photon Devices & Mat, Hefei 230031, Anhui, Peoples R China
5.Adv Laser Technol Lab Anhui Prov, Hefei 230037, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Huili,Bian, Jintian,Sun, Dunlu,et al. Er3+-doped LuYSGG crystal as a potential 2.79 mu m radiation-resistant laser material[J]. OPTICS AND LASER TECHNOLOGY,2022,152.
APA Zhang, Huili.,Bian, Jintian.,Sun, Dunlu.,Luo, Jianqiao.,Quan, Cong.,...&Chen, Yuwei.(2022).Er3+-doped LuYSGG crystal as a potential 2.79 mu m radiation-resistant laser material.OPTICS AND LASER TECHNOLOGY,152.
MLA Zhang, Huili,et al."Er3+-doped LuYSGG crystal as a potential 2.79 mu m radiation-resistant laser material".OPTICS AND LASER TECHNOLOGY 152(2022).
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