Orientations-Dependent Metal-to-Insulator Transition in Solution- Deposited High-Entropy Nickelate Thin Films

doi:10.1021/acs.cgd.2c00945

	Orientations-Dependent Metal-to-Insulator Transition in Solution- Deposited High-Entropy Nickelate Thin Films
	Tang, Xianwu 3,4; Hu, Ling 2; Zhu, Xiaoguang 2; Zhu, Xuebin 2; Wang, Yongjin 3,4; Sun, Yuping 1,5
刊名	CRYSTAL GROWTH & DESIGN
	2022-11-03
ISSN号	1528-7483
DOI	10.1021/acs.cgd.2c00945
通讯作者	Tang, Xianwu(xwtang@njupt.edu.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn)
英文摘要	Rare-earth nickelates-based high-entropy oxide (La0.2Pr0.2Nd0.2Sm0.2- Eu0.2)NiO3 thin films (HEO-Ni) were deposited on (100)-, (110)-, and (111)-oriented LaAlO3 substrates via chemical solution deposition. All HEO-Ni films show epitaxial grain growth, and demonstrate first-order metal-to-insulator transition (MIT) with a sharp resistance change of over two orders of magnitude. Especially, the (110)-epitaxial HEO-Ni thin films, besides a transition temperature of 153 K, show an absolute sharpness of 0.33 K-1 and a resistance change of 2.5 x 104. However, there are different lattice constant/strain and MTI characteristics for the differently oriented HEO-Ni thin films. Their electrical transport anisotropy may be attributed to the varied electron-phonon coupling and localization introduced by the different lattice constants, oxygen vacancies, and grain growth strains caused by the different crystal surfaces and interface energies. All of these results not only indicate the high quality of our derived films, but also suggest that the solution can be an effective alternative method to synthesize HEO thin films.
资助项目	Collaborative Innovation Program of Hefei Science Center, CAS ; National Natural Science Foundation of China ; National Key R&D Program of China ; Higher Education Discipline Innovation Project ; NUPTSF ; [2019HSCCIP008] ; [61827804] ; [2021YFE010807] ; [D17018] ; [NY221008]
WOS关键词	CHEMICAL SOLUTION DEPOSITION ; GRAIN-GROWTH ; NONSTOICHIOMETRY ; CONDUCTIVITY
WOS研究方向	Chemistry ; Crystallography ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000880840800001
资助机构	Collaborative Innovation Program of Hefei Science Center, CAS ; National Natural Science Foundation of China ; National Key R&D Program of China ; Higher Education Discipline Innovation Project ; NUPTSF
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/130120]
专题	中国科学院合肥物质科学研究院
通讯作者	Tang, Xianwu; Zhu, Xuebin
作者单位	1.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 3.Nanjing Univ Posts & Telecommun, Peter Grunberg Res Ctr, Nanjing 210003, Peoples R China 4.GaN Optoelect Integrat Int Cooperat Joint Lab Jian, Nanjing 210003, Peoples R China 5.Univ Sci & Technol China, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Tang, Xianwu,Hu, Ling,Zhu, Xiaoguang,et al. Orientations-Dependent Metal-to-Insulator Transition in Solution- Deposited High-Entropy Nickelate Thin Films[J]. CRYSTAL GROWTH & DESIGN,2022.
APA	Tang, Xianwu,Hu, Ling,Zhu, Xiaoguang,Zhu, Xuebin,Wang, Yongjin,&Sun, Yuping.(2022).Orientations-Dependent Metal-to-Insulator Transition in Solution- Deposited High-Entropy Nickelate Thin Films.CRYSTAL GROWTH & DESIGN.
MLA	Tang, Xianwu,et al."Orientations-Dependent Metal-to-Insulator Transition in Solution- Deposited High-Entropy Nickelate Thin Films".CRYSTAL GROWTH & DESIGN (2022).