Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3

	Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3
	Hongwei Ming 1,2; Chen Zhu 1,2; Tao Chen 1,2; Shuhuan Yang 1,2; Yong Chen 1,2; Jian Zhang 1,2; Di Li 1,2; Hongxing Xin 1,2; Xiaoying Qin 1,2
刊名	Nano Energy
	2022
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/128781]
专题	合肥物质科学研究院_中科院固体物理研究所
作者单位	1.University of Science and Technology of China, Hefei 230026, China 2.Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China
推荐引用方式 GB/T 7714	Hongwei Ming,Chen Zhu,Tao Chen,et al. Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3[J]. Nano Energy,2022.
APA	Hongwei Ming.,Chen Zhu.,Tao Chen.,Shuhuan Yang.,Yong Chen.,...&Xiaoying Qin.(2022).Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3.Nano Energy.
MLA	Hongwei Ming,et al."Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu 2 SnSe 3".Nano Energy (2022).