The THz Instability in a Two Dimensional Quantum Gated Electron Gas with Scattering of Carriers

doi:10.6122/CJP.52.1333

CORC > 兰州理工大学 > 兰州理工大学 > 理学院

	The THz Instability in a Two Dimensional Quantum Gated Electron Gas with Scattering of Carriers
	Zhang, Li-Ping; Su, Jun-Yan
刊名	CHINESE JOURNAL OF PHYSICS
	2014-08
卷号	52 期号:4 页码:1333-1339
ISSN号	0577-9073
DOI	10.6122/CJP.52.1333
英文摘要	Plasma wave generation is a result of the wave amplification due to the reflection from the device boundaries, and typical plasma frequencies lie in the terahertz (THz) range in nanometer field effect transistors (FETs). In this paper, the influence of the scattering of carriers on the instability of plasma waves in nanometer FETs is reported with quantum effects. The quantum effects enhance this instability considerably, as the imaginary part of the wave increases with quantum effects, but the external friction associated with electron scattering reduces the instability. Accordingly, the quantum effects can be used to compensate or overcome the stabilizing role of the friction due to the scattering of carriers on plasma wave generation. These properties could make the nanometer FETs advantageous for the design of terahertz plasmonic sources.
资助项目	National Natural Foundation of China[1110ZGA061] ; Prominent Youth Foundation of LUT[0910ZXC082]
WOS研究方向	Physics
语种	英语
出版者	PHYSICAL SOC REPUBLIC CHINA
WOS记录号	WOS:000345404800012
状态	已发表
内容类型	期刊论文
源URL	[http://119.78.100.223/handle/2XXMBERH/34313]
专题	理学院
通讯作者	Zhang, Li-Ping
作者单位	LanZhou Univ Technol, Sch Sci, Lanzhou 730050, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Li-Ping,Su, Jun-Yan. The THz Instability in a Two Dimensional Quantum Gated Electron Gas with Scattering of Carriers[J]. CHINESE JOURNAL OF PHYSICS,2014,52(4):1333-1339.
APA	Zhang, Li-Ping,&Su, Jun-Yan.(2014).The THz Instability in a Two Dimensional Quantum Gated Electron Gas with Scattering of Carriers.CHINESE JOURNAL OF PHYSICS,52(4),1333-1339.
MLA	Zhang, Li-Ping,et al."The THz Instability in a Two Dimensional Quantum Gated Electron Gas with Scattering of Carriers".CHINESE JOURNAL OF PHYSICS 52.4(2014):1333-1339.