Gas Flow Simulation Research on Reaction Chamber of Reactive ion etching

doi:10.1117/12.2512222

	Gas Flow Simulation Research on Reaction Chamber of Reactive ion etching
	Zhang Jingwen 1,2,3,4; Fan Bin 3; Li Zhiwei 3; Liu Xin 3; Li Bincheng 4; Han Yu 3; Gong Chang 1,3
	2018
关键词	reactive ion etching Fluent(Ansys) numerical simulation pressure distribution
卷号	10841
DOI	10.1117/12.2512222
英文摘要	Gas flow distribution of reaction chamber of reactive ion etching (RIE) etcher is usually considered to be a main factor in determining both the plasma distribution and etching uniformity. Based on the continuum fluid and heat transfer models of the commercial software, Fluent(Ansys), the gas flow distribution of the reaction chamber was simulated. And then the spatial distribution profiles of the pressures above the electrode surface under the different mass flow (50 similar to 250sccm) inlet conditions , and the influence of the different GAP (L = 0.03 similar to 0.06m) of the chambers on the gas flow uniformity were discussed. The result shows that the pressure distribution above the electrode has the character which the pressure is higher in the center of the electrode and lower at the edge and increases with the rise of the mass flow of inlet. And the uniformity of the gas flow distribution is enhanced with the rise of the GAP of the chamber.
会议录	9TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES (AOMATT 2018): META-SURFACE-WAVE AND PLANAR OPTICS
会议录出版者	SPIE-INT SOC OPTICAL ENGINEERING
会议录出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
语种	英语
WOS研究方向	Optics
WOS记录号	WOS:000461820700015
内容类型	会议论文
源URL	[http://119.78.100.223/handle/2XXMBERH/36202]
专题	能源与动力工程学院
通讯作者	Fan Bin
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Lanzhou Univ Technol, Sch Energy & Power Engn, Lanzhou 730050, Gansu, Peoples R China 3.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China 4.Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 610054, Sichuan, Peoples R China
推荐引用方式 GB/T 7714	Zhang Jingwen,Fan Bin,Li Zhiwei,et al. Gas Flow Simulation Research on Reaction Chamber of Reactive ion etching[C]. 见:.