Single-Dislocation Schottky Diodes

doi:10.1021/acs.nanolett.1c01081

CORC > 兰州理工大学 > 兰州理工大学 > 材料科学与工程学院 > 特聘教授组

	Single-Dislocation Schottky Diodes
	Tao, Ang 3,4; Yao, Tingting 3,4; Jiang, Yixiao 3,4; Yang, Lixin 3; Yan, Xuexi 3; Ohta, Hiromichi 5; Ikuhara, Yuichi 1,6,7; Chen, Chunlin 3,4; Ye, Hengqiang 4; Ma, Xiuliang 2,3
刊名	NANO LETTERS
	2021-07-14
卷号	21 期号:13 页码:5586-5592
关键词	dislocation Schottky diode conductive atomic force microscopy transmission electron microscopy first-principles calculations
ISSN号	1530-6984
DOI	10.1021/acs.nanolett.1c01081
英文摘要	Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped SrTiO3 substrates. Conductivity measurements using conductive atomic force microscopy indicate that a net current will flow through individual dislocation Schottky diodes under forward bias and disappear under reverse bias. Under cyclic bias voltages, the single-dislocation Schottky diodes exhibit a distinct resistive switching behavior containing low-resistance and high-resistance states with a high resistance ratio of similar to 10(3). A combined study of transmission electron microscopy and first-principles calculations reveals that the Fe2O3 dislocations comprise mixed Fe2+ and Fe3+ ions due to O deficiency and exhibit a one-dimensional electrical conductivity. The single-dislocation Schottky diodes may find applications for developing ultrahigh-density electronic and memory devices.
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000674354200019
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/148551]
专题	材料科学与工程学院_特聘教授组
作者单位	1.Tohoku Univ, Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan; 2.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China 3.Chinese Acad Sci, Univ Sci & Technol China, Sch Mat Sci & Engn, Inst Met Res,Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China; 4.Ji Hua Lab, Foshan 528200, Peoples R China; 5.Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010020, Japan; 6.Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan; 7.Univ Tokyo, Inst Engn Innovat, Tokyo 1138656, Japan;
推荐引用方式 GB/T 7714	Tao, Ang,Yao, Tingting,Jiang, Yixiao,et al. Single-Dislocation Schottky Diodes[J]. NANO LETTERS,2021,21(13):5586-5592.
APA	Tao, Ang.,Yao, Tingting.,Jiang, Yixiao.,Yang, Lixin.,Yan, Xuexi.,...&Ma, Xiuliang.(2021).Single-Dislocation Schottky Diodes.NANO LETTERS,21(13),5586-5592.
MLA	Tao, Ang,et al."Single-Dislocation Schottky Diodes".NANO LETTERS 21.13(2021):5586-5592.