Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3(110) multilayered films

doi:10.1063/5.0028370

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	Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3(110) multilayered films
	Geng, W.R.1,2; Tang, Y.L.2; Zhu, Y.L.2; Wang, Y.J.2; Ma, X.L.2,3
刊名	Journal of Applied Physics
	2020-11-14
卷号	128 期号:18
关键词	Bismuth compounds Boundary conditions Domain walls Ferroelectric films Ferroelectricity Gadolinium compounds High resolution transmission electron microscopy Nanotechnology Terbium compounds Topology Vortex flowAberration-corrected Different boundary condition High density memory Mechanical boundaries Multi-layered films Orthorhombic structures Topological structure Transmission electron microscopy observation
ISSN号	00218979
DOI	10.1063/5.0028370
英文摘要	Topological structures in ferroelectric materials play a crucial role in the potential applications of high-density memories and are currently the subject of intensive interest. Interfaces with local symmetry breaking have garnered wide attention in designing the topological domains in ferroelectric films by regulating the different boundary conditions. Here, we present multiple topological polar nanodomains near the heterointerfaces in the trilayered systems of BiFeO3/GdScO3/BiFeO3 grown on [110]-oriented TbScO3 substrates. The formation and stabilization of these topological polar states depend on the electrical and mechanical boundary conditions of the BiFeO3 layers. Aberration-corrected transmission electron microscopy observation reveals that the topological polar nanodomains, including nano-scale vortices and flux-closures at the termination of 109° domain walls and the semi-vortices at the end of 180° domain walls, are stabilized in the BiFeO3 layers confined by two orthorhombic structures. Furthermore, the formation of flux-closures near the BiFeO3/GdScO3 interface is influenced by the domain structures in the adjacent BiFeO3 layers, which is preferred by the 180° domain patterns rather than the 109° domain patterns. This work provides further understanding into the influences of boundary conditions on topological polar configurations and would offer guidance for designing novel topological states that enable the development of high-density memory devices. © 2020 Author(s).
WOS研究方向	Physics
语种	英语
出版者	American Institute of Physics Inc.
WOS记录号	WOS:000591873200002
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/132312]
专题	兰州理工大学
作者单位	1.School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang; 110016, China; 2.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang; 110016, China; 3.State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Langongping Road 287, Lanzhou; 730050, China
推荐引用方式 GB/T 7714	Geng, W.R.,Tang, Y.L.,Zhu, Y.L.,et al. Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3(110) multilayered films[J]. Journal of Applied Physics,2020,128(18).
APA	Geng, W.R.,Tang, Y.L.,Zhu, Y.L.,Wang, Y.J.,&Ma, X.L..(2020).Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3(110) multilayered films.Journal of Applied Physics,128(18).
MLA	Geng, W.R.,et al."Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3(110) multilayered films".Journal of Applied Physics 128.18(2020).