Design of hole-transport-material free CH3NH3PbI3/CsSnI3 all-perovskite heterojunction efficient solar cells by device simulation

doi:10.1016/j.solener.2020.03.037

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	Design of hole-transport-material free CH3NH3PbI3/CsSnI3 all-perovskite heterojunction efficient solar cells by device simulation
	Duan, Qianqian 2; Ji, Junyang 2; Hong, Xin 2; Fu, Yichao 2; Wang, Chenyang 2; Zhou, Kai 2; Liu, Xueqin 2; H., Yang ; Z.-Y., Wang
刊名	Solar Energy
	2020-05-01
卷号	201 页码:555-560
关键词	Absorption spectroscopy Efficiency Energy gap Heterojunctions Hole mobility Infrared devices Lead compounds Perovskite Photoelectricity Tin compounds Device simulations Hole transport materials HTM-free Long term stability Near infrared region Optimal performance Photo-electric conversion efficiency Simulation
ISSN号	0038092X
DOI	10.1016/j.solener.2020.03.037
英文摘要	The hole-transport-material (HTM) free perovskite solar cells (PSCs) have drawn great attentions due to the simple structure, low fabrication cost and long term stability. However, the photoelectric conversion efficiency (PCE) of the HTM-free PCSs are still low comparing with the traditional sandwich type PSCs. In this work, a new HTM-free PSC is proposed with CH3NH3PbI3/CsSnI3 all-perovskite heterojunction as light-harvester and carbon as back electrode through simulation using the wxAMPS tools. The results are analyzed and compared with the traditional HTM-free perovskite solar cells. It reveals that the narrow band gap CsSnI3 broadens the absorption spectrum to near-infrared region and the high hole mobility favors efficient hole transfer. The optimal performance is achieved as Voc = 1.08 eV, Jsc = 25.33 mA/cm2, FF = 79.27%, PCE = 21.64%. Comparing to the bare CH3NH3PbI3 absorbing layer, the device efficiency of CH3NH3PbI3/CsSnI3 heterojunction is improved from 18.29% to 21.64%. This indicates that the proposed HTM-free PSC is promising for future photovoltaic and optoelectronics applications. © 2020 International Solar Energy Society
WOS研究方向	Energy & Fuels
语种	英语
出版者	Elsevier Ltd
WOS记录号	WOS:000525783500052
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/115681]
专题	兰州理工大学
作者单位	1.School of Physical Science and Technology, Southwest University, Chongqing; 400715, China 2.School of Science, Chongqing University of Technology, and Chongqing Key Laboratory of Green Energy Materials Technology and Systems, Chongqing; 400054, China; 3.State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Lanzhou University of Technology, Lanzhou; 730050, China;
推荐引用方式 GB/T 7714	Duan, Qianqian,Ji, Junyang,Hong, Xin,et al. Design of hole-transport-material free CH3NH3PbI3/CsSnI3 all-perovskite heterojunction efficient solar cells by device simulation[J]. Solar Energy,2020,201:555-560.
APA	Duan, Qianqian.,Ji, Junyang.,Hong, Xin.,Fu, Yichao.,Wang, Chenyang.,...&Z.-Y., Wang.(2020).Design of hole-transport-material free CH3NH3PbI3/CsSnI3 all-perovskite heterojunction efficient solar cells by device simulation.Solar Energy,201,555-560.
MLA	Duan, Qianqian,et al."Design of hole-transport-material free CH3NH3PbI3/CsSnI3 all-perovskite heterojunction efficient solar cells by device simulation".Solar Energy 201(2020):555-560.