Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation

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	Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation
	Li Y. L.; Wang X. J.; He S. M.; Zhang B.; Sun L. X.; Li Y. D.; Guo Q.; Chen C. Q.; Chen Z. H.; Lu W.
刊名	JOURNAL OF APPLIED PHYSICS
	2012
卷号	112 期号:12 页码:-
ISSN号	0021-8979
英文摘要	The redshift (similar to 54 meV) of the photoluminescence (PL) peak energy of blue InGaN/GaN light-emitting diodes exposed to Co-60 gamma-rays was observed. Time-resolved PL indicates that the PL radiative time increases along with irradiation does. The temperature-dependent PL and photoreflectance techniques show that gamma-ray irradiance leads to higher carrier localization energies and larger Stokes' shift, respectively. These facts suggest that the redshifts of the PL peak emission introduced by gamma-ray irradiance mainly originated from the enhancement of indium fluctuation. The cathodoluminescent images of the samples before and after gamma-ray irradiation are compared to verify the results. (c) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4770465
学科主题	Physics
收录类别	SCI
WOS记录号	WOS:000312829400031
公开日期	2013-11-07
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/2733]
专题	新疆理化技术研究所_材料物理与化学研究室
作者单位	Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China;Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Optoelect Sci & Engn, Wuhan 430074, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Fudan Univ, Surface Phys Lab, Dept Phys, Shanghai 200433, Peoples R China;Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China
推荐引用方式 GB/T 7714	Li Y. L.,Wang X. J.,He S. M.,et al. Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation[J]. JOURNAL OF APPLIED PHYSICS,2012,112(12):-.
APA	Li Y. L..,Wang X. J..,He S. M..,Zhang B..,Sun L. X..,...&Lu W..(2012).Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation.JOURNAL OF APPLIED PHYSICS,112(12),-.
MLA	Li Y. L.,et al."Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 gamma-ray irradiation".JOURNAL OF APPLIED PHYSICS 112.12(2012):-.