Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures
Aierken A.; Guo Q.; Huhtio T.; Sopanen M.; He Ch F.; Li Y. D.; Wen L.; Ren D. Y.
刊名RADIATION PHYSICS AND CHEMISTRY
2013
卷号83期号:1页码:42-47
关键词Irradiation Electron beam gamma-Ray Quantum structure Photoluminescence
ISSN号0969-806X
英文摘要The effects of electron beam and gamma-ray irradiation on the optical properties of InGaAs/GaAs quantum dot (QD), quantum well (QW), and bulk structures, which were grown by metal organic vapor phase epitaxy, have been investigated. Optical properties of all the structures were degraded by both kinds of irradiation. Electron beam irradiation caused a larger reduction in the photoluminescence (PL) intensity and carrier lifetime of the samples than gamma-ray irradiation. Also, red-shift of the PL peak was observed in almost all the irradiated QD and QW structures. Comparing the different structures, the QD structure showed the best radiation resistance.
学科主题Chemistry ; Nuclear Science & Technology ; Physics
收录类别SCI
WOS记录号WOS:000312926500007
公开日期2013-11-07
内容类型期刊论文
源URL[http://ir.xjipc.cas.cn/handle/365002/2687]  
专题新疆理化技术研究所_材料物理与化学研究室
作者单位Aalto Univ, Dept Micro & Nanosci, FI-00076 Aalto, Finland;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
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Aierken A.,Guo Q.,Huhtio T.,et al. Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures[J]. RADIATION PHYSICS AND CHEMISTRY,2013,83(1):42-47.
APA Aierken A..,Guo Q..,Huhtio T..,Sopanen M..,He Ch F..,...&Ren D. Y..(2013).Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures.RADIATION PHYSICS AND CHEMISTRY,83(1),42-47.
MLA Aierken A.,et al."Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures".RADIATION PHYSICS AND CHEMISTRY 83.1(2013):42-47.
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