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	Theoretical and experimental study on Noise Equivalent Power of X-ray semiconductor ultra-fast response material based on the rad-optic effect
	Yan, Xin1,2; Wang, Tao1; Wang, Gang1; Yao, Dong1,2; Liu, Yiheng1; Gao, Guilong1; Xin, Liwei1,2; Yin, Fei1; Tian, Jinshou1; Chang, Xinlong2
英文摘要	Semiconductor material based on the rad-optic effect enables ultra-fast detection of X-rays and plays an important role in fusion diagnostics. Obtaining the accurate noise equivalent power (NEP) of the semiconductor ultrafast response material is the key to detecting X-rays. In this paper, the refractive index change mechanism of the semiconductor under X-ray irradiation was analyzed, and the quantitative relationship between the diffraction efficiency and the X-ray photon energy was established through the LT-AlGaAs diffraction imaging experiments. The impulse responses of LT-AlGaAs under 1 KeV-10 KeV X-ray radiation were calculated, revealing the variation of NEP density with radiated photon energy. In the case of bombarding the Al target to generate 1.5 KeV X-rays, the imaging experiments of LT-AlGaAs were performed. The diffraction image of LT-AlGaAs has a linear relationship with the radiation intensity, and the NEP density of LT-AlGaAs reaches 4.80×105W/cm2. This study has reference significance for the development of ultra-fast X-ray imaging systems based on the rad-optic effect. © 2022, CC BY.
	2022-06-22
产权排序	2
语种	英语
内容类型	预印本
源URL	[http://ir.opt.ac.cn/handle/181661/96056]
专题	条纹相机工程中心
作者单位	1.Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'An Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Shaanxi, Xi'An; 710119, China 2.Rocket Force University of Engineering, Xi'An; 710025, China;
推荐引用方式 GB/T 7714	Yan, Xin,Wang, Tao,Wang, Gang,et al. Theoretical and experimental study on Noise Equivalent Power of X-ray semiconductor ultra-fast response material based on the rad-optic effect. 2022.

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