A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction

doi:10.1016/j.jmst.2022.04.021

CORC > 金属研究所 > 中国科学院金属研究所

	A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction
	Wang, Yaning 3,4; Li, Wanying 3,4; Guo, Yimeng 3,4; Huang, Xin 2; Luo, Zhaoping 3,4; Wu, Shuhao 1; Wang, Hai 1; Chen, Jiezhi 1; Li, Xiuyan 3,4; Zhan, Xuepeng 1
刊名	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
	2022-11-20
卷号	128 页码:239-244
关键词	van der Waals heterostructures Ferroelectrics Memristor Artificial synapse Neuromorphic computing
ISSN号	1005-0302
DOI	10.1016/j.jmst.2022.04.021
通讯作者	Li, Xiuyan(xyli@imr.ac.cn) ; Zhan, Xuepeng(zhanxuepeng@sdu.edu.cn) ; Wang, Hanwen(hwwang15s@imr.ac.cn)
英文摘要	Memtransistor, a multi-terminal device that combines both the characteristics of a memristor and a transistor, has been intensively studied in two-dimensional layered materials (2DLM), which show potential for applications in such as neuromorphic computation. However, while often based on the migration of ions or atomic defects in the conduction channels, performances of memtransistors suffer from the poor reliability and tunability. Furthermore, those known 2DLM-based memtransistors are mostly constructed in a lateral manner, which hinders the further increasing of the transistor densities per area. Until now, fabricating non-atomic-diffusion based memtransistors with vertical structure remains challenging. Here, we demonstrate a vertically-integrated ferroelectric memristor by hetero-integrating the 2D ferroelectric materials CuInP2S6 (CIPS) into a graphite/CuInP2S6/MoS2 vertical heterostructure. Memristive behaviour and multi-level resistance states were realized. Essential synaptic behaviours including excitatory postsynaptic current, paired-pulse-facilitation, and spike-amplitude-dependent plasticity are successfully mimicked. Moreover, by applying a gate potential, the memristive behaviour and synaptic features can be effectively gate tuned. Our findings pave the way for the realization of novel gate-tunable ferroelectric synaptic devices with the capability to perform complex neural functions. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
资助项目	National Natural Science Foundation of China (NSFC)[12104462] ; National Natural Science Foundation of China (NSFC)[62104134] ; China Postdoctoral Science Foundation[2021M700154] ; Young Scholars Program of Shandong University
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	JOURNAL MATER SCI TECHNOL
WOS记录号	WOS:000810873900004
资助机构	National Natural Science Foundation of China (NSFC) ; China Postdoctoral Science Foundation ; Young Scholars Program of Shandong University
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/174440]
专题	金属研究所_中国科学院金属研究所
通讯作者	Li, Xiuyan; Zhan, Xuepeng; Wang, Hanwen
作者单位	1.Shandong Univ, Sch Informat Sci & Engn ISE, Qingdao 266237, Peoples R China 2.Aalto Univ, Dept Appl Phys, Aalto, Finland 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Wang, Yaning,Li, Wanying,Guo, Yimeng,et al. A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,128:239-244.
APA	Wang, Yaning.,Li, Wanying.,Guo, Yimeng.,Huang, Xin.,Luo, Zhaoping.,...&Wang, Hanwen.(2022).A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,128,239-244.
MLA	Wang, Yaning,et al."A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 128(2022):239-244.