High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer

doi:10.1088/1361-6528/ac6ff0

CORC > 金属研究所 > 中国科学院金属研究所

	High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer
	Jiang, Haiyan 2,3; Li, Bo 2,3; Wei, Yuning 2,3; Feng, Shun 3; Di, Zengfeng 1; Xue, Zhongying 1; Sun, Dongming 2,3; Liu, Chi 2,3
刊名	NANOTECHNOLOGY
	2022-08-20
卷号	33 期号:34 页码:7
关键词	graphene germanium 2D material Fermi-level pinning photodetector
ISSN号	0957-4484
DOI	10.1088/1361-6528/ac6ff0
通讯作者	Xue, Zhongying(simsnow@mail.sim.ac.cn) ; Sun, Dongming(dmsun@imr.ac.cn) ; Liu, Chi(chiliu@imr.ac.cn)
英文摘要	The metal/germanium (Ge) photodetectors have attracted much attention for their potential applications in on-chip optoelectronics. One critical issue is the relatively large dark current due to the limited Schottky potential barrier height of the metal/germanium junction, which is mainly caused by the small bandgap of Ge and the Fermi energy level pinning effect between the metal and Ge. The main technique to solve this problem is to insert a thin interlayer between the metal and Ge. However, so far, the dark current of the photodetectors is still large when using a bulk-material insertion layer, while when using a two-dimensional insertion layer, the area of the insertion layer is too small to support a mass production. Here, we report a gold/graphene/germanium photodetector with a wafer-scale graphene insertion layer using a 4 inch graphene-on-germanium wafer. The insertion layer significantly increases the potential barrier height, leading to a dark current as low as 1.6 mA cm(-2), and a responsivity of 1.82 A W-1 which are the best results for metal/Ge photodetectors reported so far. Our work contributes to the mass production of high-performance metal/Ge photodetectors.
资助项目	National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[62125406] ; Chinese Academy of Sciences (SYNL Young Talent Project)[SKLA-2019-03] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; National Key Research and Development Program of China[2021YFA1200013] ; Shandong Natural Science Foundation of China[ZR2019ZD49]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	IOP Publishing Ltd
WOS记录号	WOS:000807167200001
资助机构	National Natural Science Foundation of China ; Chinese Academy of Sciences (SYNL Young Talent Project) ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; National Key Research and Development Program of China ; Shandong Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/174257]
专题	金属研究所_中国科学院金属研究所
通讯作者	Xue, Zhongying; Sun, Dongming; Liu, Chi
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Jiang, Haiyan,Li, Bo,Wei, Yuning,et al. High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer[J]. NANOTECHNOLOGY,2022,33(34):7.
APA	Jiang, Haiyan.,Li, Bo.,Wei, Yuning.,Feng, Shun.,Di, Zengfeng.,...&Liu, Chi.(2022).High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer.NANOTECHNOLOGY,33(34),7.
MLA	Jiang, Haiyan,et al."High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer".NANOTECHNOLOGY 33.34(2022):7.