Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions

doi:10.1103/PhysRevApplied.17.044001

	Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions
	Xiao, Wei 1,2,3; Kang, Lili 4; Hao, Hua 1; Zhou, Yanhong 5; Zheng, Xiaohong 1,2,3; Zhang, Lei 6,7; Zeng, Zhi 1,2
刊名	PHYSICAL REVIEW APPLIED
	2022-04-01
卷号	17
ISSN号	2331-7019
DOI	10.1103/PhysRevApplied.17.044001
通讯作者	Zheng, Xiaohong(xhzheng@theory.issp.ac.cn)
英文摘要	Ferroelectric tunnel junctions (FTJs) are very promising candidates for nonvolatile memory devices and a large tunneling electroresistance (TER) ratio is essential for their high performance. This work intends to achieve large TER ratio by interfacial doping in FTJs by taking Pt/BaTiO3/Pt tunnel junctions as an example. By introducing Na (or Li) substitutions for Ti atoms at the right interface, the resultant strong Coulomb repulsion from the negatively charged NaO2 interface pushes the electrons to higher energy in an increasing manner from left to right in the whole BaTiO3 barrier, which leads to rapidly increasing potential energy profile and partial metallization close to the right interface in the left polarization state. However, in the right polarization state, since the right ferroelectric polarization produces a decreasing potential energy profile from left to right, although the NaO2 interface also pushes the electrons to much higher energy and the slope of the potential energy profile changes from negative to positive, the final slope of the potential energy profile is much less steeper and the Fermi level is always inside the band gap, leading to a completely insulating state. The substantially different distributions of the electrostatic potential energy profile in the two polarization states lead to great differences in the transport properties. Based on density-functional-theory calculations, a TER ratio up to 10(5)% is achieved. The results indicate that a negatively charged interface based on interfacial substitution is a promising method for obtaining a large TER ratio in FTJs, and thus will have implications for the further understanding and design of high-performance FTJs.
资助项目	National Natural Science Foundation of China[11974355] ; National Natural Science Foundation of China[12074230] ; National Key R&D Program of China[2017YFA0304203] ; Shanxi Province 100-Plan Talent Program ; Fund for Shanxi 1331 Project ; Natural Science Foundation of Jiangxi Province[20202ACBL212005]
WOS关键词	TRANSITION ; THICKNESS ; PHYSICS
WOS研究方向	Physics
语种	英语
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000782846800003
资助机构	National Natural Science Foundation of China ; National Key R&D Program of China ; Shanxi Province 100-Plan Talent Program ; Fund for Shanxi 1331 Project ; Natural Science Foundation of Jiangxi Province
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/128565]
专题	中国科学院合肥物质科学研究院
通讯作者	Zheng, Xiaohong
作者单位	1.Chinese Acad Sci, HFIPS, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China 3.Nanjing Forestry Univ, Coll Informat Sci & Technol, Nanjing 210037, Peoples R China 4.Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China 5.East China Jiao Tong Univ, Coll Sci, Nanchang 330013, Jiangxi, Peoples R China 6.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China 7.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
推荐引用方式 GB/T 7714	Xiao, Wei,Kang, Lili,Hao, Hua,et al. Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions[J]. PHYSICAL REVIEW APPLIED,2022,17.
APA	Xiao, Wei.,Kang, Lili.,Hao, Hua.,Zhou, Yanhong.,Zheng, Xiaohong.,...&Zeng, Zhi.(2022).Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions.PHYSICAL REVIEW APPLIED,17.
MLA	Xiao, Wei,et al."Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions".PHYSICAL REVIEW APPLIED 17(2022).