research on sram functional failure mode induced by total ionizing dose irradiation | |
Zheng Qi-Wen; Yu Xue-Feng; Cui Jiang-Wei; Guo Qi; Ren Di-Yuan; Cong Zhong-Chao | |
刊名 | ACTA PHYSICA SINICA |
2013 | |
卷号 | 62期号:11页码:378-384 |
关键词 | Sram Function Failure Test Pattern Data Retention Fault |
ISSN号 | 1000-3290 |
DOI | 10.7498/aps.62.116101 |
英文摘要 | In the present paper, function test of different test pattern was used to investigate function failure of static random access memory (SRAM) induced by the total dose effect. By comparing the function test results of different test pattern and single error bit, it is shown that the failure mode of the device is data retention fault, and different storage cell had diverse data retention time, the fault module of device is the storage cell. We discussed the reason for these phenomena in detail using simple circuit model of storage cell, and also analyzed the influence of these phenomena on test method to evaluate the total dose radiation damage of SRAM. |
学科主题 | Physics |
WOS记录号 | WOS:000320244200051 |
公开日期 | 2013-11-07 |
内容类型 | 期刊论文 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/2699] |
专题 | 新疆理化技术研究所_材料物理与化学研究室 |
作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Zheng Qi-Wen,Yu Xue-Feng,Cui Jiang-Wei,et al. research on sram functional failure mode induced by total ionizing dose irradiation[J]. ACTA PHYSICA SINICA,2013,62(11):378-384. |
APA | Zheng Qi-Wen,Yu Xue-Feng,Cui Jiang-Wei,Guo Qi,Ren Di-Yuan,&Cong Zhong-Chao.(2013).research on sram functional failure mode induced by total ionizing dose irradiation.ACTA PHYSICA SINICA,62(11),378-384. |
MLA | Zheng Qi-Wen,et al."research on sram functional failure mode induced by total ionizing dose irradiation".ACTA PHYSICA SINICA 62.11(2013):378-384. |
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