Suppression of Persistent Photoconductivity of Rubrene Crystals using Gate-Tunable Rubrene/Bi(2)Se(3)Diodes with Photoinduced Negative Differential Resistance

doi:10.1002/smll.202002312

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Suppression of Persistent Photoconductivity of Rubrene Crystals using Gate-Tunable Rubrene/Bi(2)Se(3)Diodes with Photoinduced Negative Differential Resistance
	K. Pei,F. K. Wang,W. Han,S. J. Yang,K. L. Liu,K. W. Liu,H. Q. Li and T. Y. Zhai
刊名	Small
	2020
卷号	16 期号:32 页码:9
ISSN号	1613-6810
DOI	10.1002/smll.202002312
英文摘要	Organic single-crystalline semiconductors show great potential in high-performance photodetectors. However, they suffer from persistent photoconductivity (PPC) due to the charge trapping, which has severely hindered high-speed imaging applications. Here, a universal strategy of solving the PPC by integrating with topological insulator Bi(2)Se(3)is provided. The rubrene/Bi(2)Se(3)heterojunctions are selected as an example for general demonstration due to the reproducibly high mobility and broad optoelectronic applications of rubrene crystals. By virtue of high carrier concentration on Bi(2)Se(3)surface and the strong built-in electrical field, the photoresponse of the heterotransistor is significantly reduced for more than two orders (from over 10 s to 54 ms), meanwhile the photoresponsivity can reach 124 A W-1. To the best of knowledge, this operating speed is among the fastest responses in organic-inorganic heterojunctions. The heterotransistor also shows unique negative differential resistance under positive gate bias, which can be explained by photoinduced de-trapping of electron trap states in the bulk rubrene crystals. Besides, the rubrene/Bi(2)Se(3)heterojunction behaves as a gate-tunable backward-like diode due to the inhomogenous carrier distribution in the thick rubrene crystal and inversion of relative Fermi level positions. The findings demonstrate versatile functionalities of the rubrene/Bi(2)Se(3)heterojunctions for various emerging optoelectronic applications.
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语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/64932]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	K. Pei,F. K. Wang,W. Han,S. J. Yang,K. L. Liu,K. W. Liu,H. Q. Li and T. Y. Zhai. Suppression of Persistent Photoconductivity of Rubrene Crystals using Gate-Tunable Rubrene/Bi(2)Se(3)Diodes with Photoinduced Negative Differential Resistance[J]. Small,2020,16(32):9.
APA	K. Pei,F. K. Wang,W. Han,S. J. Yang,K. L. Liu,K. W. Liu,H. Q. Li and T. Y. Zhai.(2020).Suppression of Persistent Photoconductivity of Rubrene Crystals using Gate-Tunable Rubrene/Bi(2)Se(3)Diodes with Photoinduced Negative Differential Resistance.Small,16(32),9.
MLA	K. Pei,F. K. Wang,W. Han,S. J. Yang,K. L. Liu,K. W. Liu,H. Q. Li and T. Y. Zhai."Suppression of Persistent Photoconductivity of Rubrene Crystals using Gate-Tunable Rubrene/Bi(2)Se(3)Diodes with Photoinduced Negative Differential Resistance".Small 16.32(2020):9.