Non-axial N-O-V-Zn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

doi:10.1016/j.apsusc.2020.147168

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	Non-axial N-O-V-Zn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films
	W. J. Li,H. Zhang,X. Y. Zhang,G. P. Qin,H. L. Li,Y. Q. Xiong,L. J. Ye,H. B. Ruan,C. Z. Tong,C. Y. Kong and L. Fang
刊名	Applied Surface Science
	2020
卷号	529 页码:6
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2020.147168
英文摘要	Over the past two decades, there have been numerous reports about the p-type behavior of N-doped ZnO. To date, however, its origin still remains mysterious, especially, N ion-implanted ZnO system. Herein, ZnO films were implanted with 70 keV N ions to a fluence of 1x10(17) cm(-2) at room temperature, followed by annealing in the range of 750-950 degrees C. The obtained p-type ZnO films have a widely hole concentration of 2.87 x 10(15) similar to 2.64 x1016 cm(-3), a mobility of 1.37 similar to 7.27 cm(2)V(-1)s(-1) and a resistivity of 148.3 similar to 299.4 Omega.cm. The thermal evolution of point defects and the possible shallow acceptors in N-implanted ZnO films were further investigated by means of Raman scattering, Photoluminescence (PL) and Electron paramagnetic resonance (EPR). The results show that abundant intrinsic-related defects including zinc interstitials (Zn-i), oxygen vacancies (V-O) and zinc vacancies (V-Zn) were introduced during ion implantation. It is demonstrated that appropriate post-annealing can not only reduce the compensation of donor defects, but also facilitate the formation of N-related shallow acceptor complexes, both of which contribute to the p-type conduction transition of N-implanted ZnO films. The non-axial N-O-V-Zn complexes are proposed to be a kind of potential and stable acceptors in N ion-implanted ZnO films.
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语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/64720]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	W. J. Li,H. Zhang,X. Y. Zhang,G. P. Qin,H. L. Li,Y. Q. Xiong,L. J. Ye,H. B. Ruan,C. Z. Tong,C. Y. Kong and L. Fang. Non-axial N-O-V-Zn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films[J]. Applied Surface Science,2020,529:6.
APA	W. J. Li,H. Zhang,X. Y. Zhang,G. P. Qin,H. L. Li,Y. Q. Xiong,L. J. Ye,H. B. Ruan,C. Z. Tong,C. Y. Kong and L. Fang.(2020).Non-axial N-O-V-Zn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films.Applied Surface Science,529,6.
MLA	W. J. Li,H. Zhang,X. Y. Zhang,G. P. Qin,H. L. Li,Y. Q. Xiong,L. J. Ye,H. B. Ruan,C. Z. Tong,C. Y. Kong and L. Fang."Non-axial N-O-V-Zn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films".Applied Surface Science 529(2020):6.