Comment on "Zero-thermal-quenching and photoluminescence tuning with assistance of carriers from defect cluster traps" by Chen et al., J. Mater. Chem. C, 2018, 6, 10687-10692
Y. Xiao and Z. D. Hao
刊名Journal of Materials Chemistry C
2020
卷号8期号:3页码:1151-1152
ISSN号2050-7526
DOI10.1039/c9tc01936g
英文摘要Chen et al. (J. Mater. Chem. C, 2018, 6, 10687-10692) reported that the emission of Tb3+ in Sr8ZnSc(PO4)(7):Tb3+ shows zero-thermal-quenching behavior at high temperature (up to 200 degrees C), which was attributed to the compensation of the emission intensity loss by carriers from different trap depths. In this comment, we argue that this unique behavior is just an intrinsic property of Tb3+, and the strategy of sensitization by other ions like Ce3+ is needed to make Tb3+ activated luminescence materials usable for phosphor converted white LEDs.
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语种英语
内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/64368]  
专题中国科学院长春光学精密机械与物理研究所
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Y. Xiao and Z. D. Hao. Comment on "Zero-thermal-quenching and photoluminescence tuning with assistance of carriers from defect cluster traps" by Chen et al., J. Mater. Chem. C, 2018, 6, 10687-10692[J]. Journal of Materials Chemistry C,2020,8(3):1151-1152.
APA Y. Xiao and Z. D. Hao.(2020).Comment on "Zero-thermal-quenching and photoluminescence tuning with assistance of carriers from defect cluster traps" by Chen et al., J. Mater. Chem. C, 2018, 6, 10687-10692.Journal of Materials Chemistry C,8(3),1151-1152.
MLA Y. Xiao and Z. D. Hao."Comment on "Zero-thermal-quenching and photoluminescence tuning with assistance of carriers from defect cluster traps" by Chen et al., J. Mater. Chem. C, 2018, 6, 10687-10692".Journal of Materials Chemistry C 8.3(2020):1151-1152.
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