High-power single-longitudinal-mode double-tapered gain-coupled distributed feedback semiconductor lasers based on periodic anodes defined by i-line lithography
Y.X.Lei; Y.Y.Chen; F.Gao; D.Z.Ma; P.Jia; H.Wu; C.Chen
刊名Optics Communications
2019
卷号443页码:150-155
关键词Semiconductor lasers,Distributed feedback lasers,Gain-coupled,Double-tapered,diodes,Optics
ISSN号0030-4018
DOI10.1016/j.optcom.2019.02.073
英文摘要In this paper, we demonstrate a regrowth-free double-tapered gain-coupled distributed feedback semiconductor laser. It is designed based on periodic surface current injection to reach a high-power and single-longitudinal mode. A continuous-wave output power of over 1.2 W/facet is achieved at 4 A. High single-longitudinal-mode output power reaches up to 0.9 W/facet at 3 A at each uncoated facet. The side mode suppression ratio is nearly 30 dB at 980 nm. The 3 dB spectral width is less than 2.7 pm. The lateral far field divergence angle is only 14.5 degrees, the beam quality factor M-2 is 1.7, achieving a near-diffraction-limit emission. Our device, produced by standard i-line lithography, enhances the output power while obtaining the pleasurable spectral and spatial properties. It has great potential in widespread commercial applications such as high efficiency pumping sources for its low-cost, easy fabrication technique and excellent performance.
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语种英语
内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/63278]  
专题中国科学院长春光学精密机械与物理研究所
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Y.X.Lei,Y.Y.Chen,F.Gao,et al. High-power single-longitudinal-mode double-tapered gain-coupled distributed feedback semiconductor lasers based on periodic anodes defined by i-line lithography[J]. Optics Communications,2019,443:150-155.
APA Y.X.Lei.,Y.Y.Chen.,F.Gao.,D.Z.Ma.,P.Jia.,...&C.Chen.(2019).High-power single-longitudinal-mode double-tapered gain-coupled distributed feedback semiconductor lasers based on periodic anodes defined by i-line lithography.Optics Communications,443,150-155.
MLA Y.X.Lei,et al."High-power single-longitudinal-mode double-tapered gain-coupled distributed feedback semiconductor lasers based on periodic anodes defined by i-line lithography".Optics Communications 443(2019):150-155.
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