Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface

doi:10.1021/acsami.9b08946

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface
	Y.P.Song; B.Yao; Y.F.Li; Z.H.Ding; H.H.Sun; Z.Z.Zhang
刊名	Acs Applied Materials & Interfaces
	2019
卷号	11 期号:35 页码:31851-31859
关键词	Cu2ZnSn(S,Se)(4),solar cells,back surface field,p-MoSe2:Nb,carrier,recombination,shunt resistance,series resistance,recombination,resistance,monolayer,contact,mos2,bsf,Science & Technology - Other Topics,Materials Science
ISSN号	1944-8244
DOI	10.1021/acsami.9b08946
英文摘要	Cu2ZnSn(S,Se)(4) (CZTSSe) thin-film solar cells have been encountering a bottleneck period since the champion power conversion efficiency (PCE) of 12.7% was achieved by Kim et al. in 2014. One of the critical factors that impede its further development is the relatively low open-circuit voltage (V-OC) caused by serious interface carrier recombination. In this regard, back surface field (BSF) employment is a feasible strategy to address the V-OC issue of CZTSSe solar cells to some extent. Here, we demonstrated a self-organized BSF introduced by prompting interfacial MoSe2 layer transition from inherent n-type to desirable p-type with Nb doping (p-MoSe2:Nb). The BSF application can significantly reduce the carrier recombination at the back electrode interface (BEI) and lower down the back contact barrier height. The PCE of the corresponding cell was improved from 4.72 to 7.15% because of the enhancement of V-OC and fill factor, primarily stemming from the doubling aspects of increased shunt resistance (R-Sh), decreased series resistance (R-S), and alleviative recombination velocity of the BEI induced by the BSF. Our results suggest that introducing a BSF fulfilled with p-MoSe2:Nb is a facile and promising route to improve the performance of CZTSSe thin-film solar cells.
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/63070]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y.P.Song,B.Yao,Y.F.Li,et al. Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface[J]. Acs Applied Materials & Interfaces,2019,11(35):31851-31859.
APA	Y.P.Song,B.Yao,Y.F.Li,Z.H.Ding,H.H.Sun,&Z.Z.Zhang.(2019).Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface.Acs Applied Materials & Interfaces,11(35),31851-31859.
MLA	Y.P.Song,et al."Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface".Acs Applied Materials & Interfaces 11.35(2019):31851-31859.