Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes

doi:10.3390/nano9030365

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes
	H.Wan; B.Tang; N.Li; S.J.Zhou; C.Q.Gui; S.Liu
刊名	Nanomaterials
	2019
卷号	9 期号:3 页码:8
关键词	GaN-based UV LED,wet chemical etching,prism-structured sidewall,crystal orientation,light extraction,efficiency,surface,plane,enhancement,extraction,layer,Science & Technology - Other Topics,Materials Science
ISSN号	2079-4991
DOI	10.3390/nano9030365
英文摘要	We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of gallium nitride (GaN) and these crystallographic planes are with different chemical stability to the TMAH solution. After TMAH etching treatment, trigonal prisms were observed on sidewalls where m-plane GaN was exposed. For the investigated two types of light-emitting diodes (LEDs) with orthogonal arrangements, the LEDs with their larger sidewalls orientated along the [11-20] direction exhibited an additional 10% improvement in light output power after TMAH etching treatment compared to the LEDs with larger sidewalls orientated along the [1-100] direction.
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/63029]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	H.Wan,B.Tang,N.Li,et al. Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes[J]. Nanomaterials,2019,9(3):8.
APA	H.Wan,B.Tang,N.Li,S.J.Zhou,C.Q.Gui,&S.Liu.(2019).Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes.Nanomaterials,9(3),8.
MLA	H.Wan,et al."Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes".Nanomaterials 9.3(2019):8.