High-power GaSb-based microstripe broad-area lasers

doi:10.7567/apex.11.032702

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	High-power GaSb-based microstripe broad-area lasers
	Lu, Z. F.; Wang, L. J.; Zhang, Y.; Shu, S. L.; Tian, S. C.; Tong, C. Z.; Hou, G. Y.; Chai, X. L.; Xu, Y. Q.; Ni, H. Q.
刊名	Applied Physics Express
	2018
卷号	11 期号:3 页码:4
关键词	low-beam divergence mu-m semiconductor-lasers diode-lasers wave-guide field Physics
ISSN号	1882-0778
DOI	10.7567/apex.11.032702
英文摘要	A simple and effective approach based on the microstripe broad-area (MSBA) structure was proposed, and high-efficiency and high-power mid-infrared GaSb-based quantum well lasers were demonstrated. It was shown that the MSBA structure can effectively suppress the lateral current leakage and improve the temperature behavior of GaSb lasers. Compared with the conventional broad-area structure, the energy conversion efficiency of MSBA lasers was more than threefold and threshold current density decreased above 50%. High characteristic temperature and high beam quality were realized. (C) 2018 The Japan Society of Applied Physics
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/61021]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Lu, Z. F.,Wang, L. J.,Zhang, Y.,et al. High-power GaSb-based microstripe broad-area lasers[J]. Applied Physics Express,2018,11(3):4.
APA	Lu, Z. F..,Wang, L. J..,Zhang, Y..,Shu, S. L..,Tian, S. C..,...&Wang, L. J..(2018).High-power GaSb-based microstripe broad-area lasers.Applied Physics Express,11(3),4.
MLA	Lu, Z. F.,et al."High-power GaSb-based microstripe broad-area lasers".Applied Physics Express 11.3(2018):4.